HMC1127

Data Sheet GaAs, pHEMT, MMIC, High Gain Power Amplifier, 2 GHz to 50 GHz HMC1127 FEATURES Output power for 1 dB compression (P1dB): 12.5 dBm typical at 8 GHz to 30 GHz Saturated output power (PSAT): 17.5 dBm typical at 8 GHz to 30 GHz Gain: 14.5 dB typical at 30 GHz to 50 GHz Output third-order intercept (IP3): 23 dBm typical at 8 GHz to 30 GHz Supply voltage: 5 V at 80 mA 50 Ω matched input/output Die size: 2.7 mm × 1.45 mm × 0.1 mm APPLICATIONS Test instrumentation Microwave radios and VSATs Military and space Telecommunications infrastructure Fiber optics FUNCTIONAL BLOCK DIAGRAM VDD 2 HMC1127 3 RFOUT RFIN 1 Figure 1. 5 VGG1 4 VGG2 13085-001 GENERAL DESCRIPTION The HMC1127 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates between 2 GHz and 50 GHz. The HMC1127 provides 14.5 dB of gain, 23 dBm output IP3 and 12.5 dBm of output power at 1 dB gain compression while requiring 80 mA from a 5 V supply. The HMC1127 amplifier inputs/outputs are internally matched to 50 Ω facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils). Rev. B Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of paten...