POWER AMPLIFIER. HMC327MS8G Datasheet

HMC327MS8G AMPLIFIER. Datasheet pdf. Equivalent

Part HMC327MS8G
Description GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER
Feature HMC327MS8G / 327MS8GE v06.1209 GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz 11 Typica.
Manufacture Analog Devices
Datasheet
Download HMC327MS8G Datasheet



HMC327MS8G
HMC327MS8G / 327MS8GE
v06.1209
GaAs InGaP HBT MMIC
1/2 WATT POWER AMPLIFIER, 3 - 4 GHz
11
Typical Applications
The HMC327MS8G(E) is ideal for:
• Wireless Local Loop
• WiMAX & Fixed Wireless
• Access Points
• Subscriber Equipment
Features
High Gain: 21 dB
Saturated Power: +30 dBm @ 45% PAE
Output P1dB: +27 dBm
Single Supply: +5V
Power Down Capability
Low External Part Count
Compact MSOP Package: 14.8 mm2
Functional Diagram
General Description
The HMC327MS8G(E) is a high efficiency GaAs
InGaP Heterojunction Bipolar Transistor (HBT) MMIC
power amplifier which operates between 3 and 4 GHz.
The amplifier is packaged in a low cost, surface mo-
unt 8 leaded package with an exposed base for
improved RF and thermal performance. With a mini-
mum of external components, the amplifier provides
21 dB of gain, +30 dBm of saturated power at 45%
PAE from a single +5V supply. Power down capability
is available to conserve current consumption when the
amplifier is not in use.
11 - 2
Electrical Specifications, TA = +25 °C, Vs = 5V, Vctl = 5V
Parameter
Min.
Frequency Range
Gain
17
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icq)
Control Current (Ipd)
Switching Speed
*See Application Circuit for proper biasing configuration.
24
36
Vctl* = 0V/5V
Vctl* = 5V
tON, tOFF
Typ.
3-4
21
0.025
15
8
27
30
40
5
0.002 / 250
7
40
Max.
24
0.035
Units
GHz
dB
dB / °C
dB
dB
dBm
dBm
dBm
dB
mA
mA
ns
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HMC327MS8G
HMC327* PRODUCT PAGE QUICK LINKS
Last Content Update: 02/23/2017
COMPARABLE PARTS
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EVALUATION KITS
HMC327MS8G Evaluation Board
DESIGN RESOURCES
HMC327 Material Declaration
PCN-PDN Information
Quality And Reliability
Symbols and Footprints
DOCUMENTATION
Application Notes
Broadband Biasing of Amplifiers General Application Note
MMIC Amplifier Biasing Procedure Application Note
Thermal Management for Surface Mount Components
General Application Note
Data Sheet
HMC327 Data Sheet
TOOLS AND SIMULATIONS
HMC327 S-Parameter
REFERENCE MATERIALS
Quality Documentation
HMC Legacy PCN: MS##, MS##E and MS##G,MS##GE
packages - Relocation of pre-existing production
equipment to new building
Package/Assembly Qualification Test Report: MS8G (QTR:
2014-00393)
PCN: MS, QS, SOT, SOIC packages - Sn/Pb plating vendor
change
Semiconductor Qualification Test Report: GaAs HBT-B
(QTR: 2013-00229)
DISCUSSIONS
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