HMC351S8

v04.0408 HMC351S8 / 351S8E GaAs MMIC HIGH IP3 DOUBLEBALANCED MIXER, 0.7 - 1.2 GHz Typical Applications Features The HMC351S8 / HMC351S8E is ideal for: Conversion Loss: 9.0 dB Cellular Basestations LO/IF Isolation: 35 dB Cable Modems LO/RF Isolation: 42 dB Fixed Wireless Access Systems Input IP3: +25 dBm MIXERS - HIGH IP3 - SMT 9 LETE Functional Diagram Input IP2: +48 dBm General Description The HMC351S8 & HMC351S8E are double balanced mixers in 8 lead plastic surface mount packages. The passive GaAs schottky diode mixer implements planar on chip baluns and requires no external components. The mixer can be used as an upconverter, down converter, or modulator. The mixer provides 9 dB conversion loss and +25 dBm IIP3 with LO drive levels of +19 dBm. The design was optimized for low cost high volume applications where high converter linearity is required. The high LO suppression of 42 dB yields excellent carrier suppression for modulator applications. BSO Electrical Specifications, TA = +25° C O Frequency Range, RF & LO Parameter LO = +19 dBm, IF = 100 MHz Min. Typ. Max. 0.7 - 1.2 Units GHz Frequency Range, IF DC - 0.3 GHz Conversion Loss 9 11.5 dB Noise Figure (SSB) 9 11.5 dB LO to RF Isolation 36 42 dB LO to IF Isolation 31 35 dB RF to IF Isolation 9 13 dB IP3 (Input) 22 25 dBm IP2 (Input) 40 48 dBm 1 dB Compression (Input) 12 16 dBm *Unless otherwise noted, all measurements performed as downconverter, IF= 100 MH...