HMC373LP3E

AMPLIFIERS -LOW NOISE -SMT HMC373LP3 / 373LP3E v04.1119 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz Typical Applications The HMC373LP3 / HMC373LP3E is ideal for basestation receivers: GSM, GPRS & EDGE CDMA & W-CDMA Private Land Mobile Radio Functional Diagram Features Noise Figure: 0.9 dB Output IP3: +35 dBm Gain: 14 dB Low Loss LNA Bypass Path Single Supply: +5V @ 90 mA 50 Ohm Matched Output General Description The HMC373LP3 / HMC373LP3E are versatile, high dynamic range GaAs MMIC Low Noise Amplifiers that integrates a low loss LNA bypass mode on the IC. The amplifier is ideal for GSM & CDMA cellular basestation front-end receivers operating between 700 and 1000 MHz and provides 0.9 dB noise figure, 14 dB of gain and +35 dBm IP3 from a single supply of +5V @ 90 mA. Input and output return losses are 28 and 12 dB respectively with the LNA requiring minimal external components to optimize the RF input match, RF ground and DC bias. By presenting an open or short circuit to a single control line, the LNA can be switched into a low 2.0 dB loss bypass mode reducing the current consumption to 10 µA. For applications which require improved noise figure, please see the HMC668LP3(E). Electrical Specifications, TA = +25° C, Vdd = +5V Parameter LNA Mode Min. Typ. Max. LNA Mode Min. Typ. Max. Bypass Mode Min. Typ. Max. Frequency Range 810 - 960 700 - 1000 700 - 1000 Gain 11.5 13.5 10.5 14 -2.8 -2.0 Gain Variation Over Temperature 0.008 0.01...