NOISE AMPLIFIER. HMC373LP3E Datasheet

HMC373LP3E AMPLIFIER. Datasheet pdf. Equivalent

Part HMC373LP3E
Description GaAs PHEMT MMIC LOW NOISE AMPLIFIER
Feature AMPLIFIERS -LOW NOISE -SMT HMC373LP3 / 373LP3E v04.1119 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPA.
Manufacture Analog Devices
Datasheet
Download HMC373LP3E Datasheet



HMC373LP3E
HMC373LP3 / 373LP3E
v04.1119
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz
Typical Applications
The HMC373LP3 / HMC373LP3E is ideal for
basestation receivers:
• GSM, GPRS & EDGE
• CDMA & W-CDMA
• Private Land Mobile Radio
Functional Diagram
Features
Noise Figure: 0.9 dB
Output IP3: +35 dBm
Gain: 14 dB
Low Loss LNA Bypass Path
Single Supply: +5V @ 90 mA
50 Ohm Matched Output
General Description
The HMC373LP3 / HMC373LP3E are versatile, high
dynamic range GaAs MMIC Low Noise Amplifiers
that integrates a low loss LNA bypass mode on the
IC. The amplifier is ideal for GSM & CDMA cellular
basestation front-end receivers operating between
700 and 1000 MHz and provides 0.9 dB noise figure,
14 dB of gain and +35 dBm IP3 from a single supply of
+5V @ 90 mA. Input and output return losses are 28
and 12 dB respectively with the LNA requiring minimal
external components to optimize the RF input match,
RF ground and DC bias. By presenting an open or
short circuit to a single control line, the LNA can be
switched into a low 2.0 dB loss bypass mode reducing
the current consumption to 10 µA. For applications
which require improved noise figure, please see the
HMC668LP3(E).
Electrical Specifications, TA = +25° C, Vdd = +5V
Parameter
LNA Mode
Min. Typ. Max.
LNA Mode
Min. Typ. Max.
Bypass Mode
Min. Typ. Max.
Frequency Range
810 - 960
700 - 1000
700 - 1000
Gain
11.5 13.5
10.5
14
-2.8 -2.0
Gain Variation Over Temperature
0.008 0.015
0.008 0.015
0.002 0.004
Noise Figure
0.9
1.3
1.0
1.4
Input Return Loss
28
25
30
Output Return Loss
12
11
25
Reverse Isolation
20
19
Power for 1dB Compression (P1dB)*
18
21
17
20
30
Saturated Output Power (Psat)
22.5
22
Third Order Intercept (IP3)*
(-20 dBm Input Power per tone, 1 MHz tone spacing)
35.5
35
50
Supply Current (Idd)
90
90
0.01
* P1dB and IP3 for LNA Mode are referenced to RFOUT while P1dB and IP3 for Bypass Mode are referenced to RFIN.
Units
MHz
dB
dB / °C
dB
dB
dB
dB
dBm
dBm
dBm
mA
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HMC373LP3E
HMC373LP3 / 373LP3E
v04.1119
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz
LNA Broadband Gain & Return Loss
20
10
0
-10
-20
-30
S21
S11
S22
-40
0.25 0.5 0.75
1
1.25 1.5 1.75
2
FREQUENCY (GHz)
LNA – Gain, Noise Figure &
Power vs. Supply Voltage @ 850 MHz
22
1.2
20
1
18
0.8
16
Gain
P1dB
14
Noise Figure
0.6
0.4
12
4.5
4.75
5
5.25
Vdd (Vdc)
0.2
5.5
LNA Gain vs. Temperature
20
18
+25 C
+85 C
-40 C
16
14
12
10
0.7
0.75
0.8
0.85
0.9
0.95
1
FREQUENCY (GHz)
LNA Noise Figure vs. Temperature
1.5
1.3
+25 C
+85 C
-40 C
1.1
0.9
0.7
0.5
0.7
0.75
0.8
0.85
0.9
0.95
1
FREQUENCY (GHz)
LNA Gain vs. Vdd
20
18
16
+4.5 V
+5.0 V
+5.5 V
14
12
10
0.7
0.75
0.8
0.85
0.9
0.95
1
FREQUENCY (GHz)
LNA Noise Figure vs. Vdd
1.5
+4.5 V
1.3
+5.0 V
+5.5 V
1.1
0.9
0.7
0.5
0.7
0.75
0.8
0.85
0.9
0.95
1
FREQUENCY (GHz)
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
2





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