NOISE AMPLIFIER. HMC375LP3E Datasheet

HMC375LP3E AMPLIFIER. Datasheet pdf. Equivalent

Part HMC375LP3E
Description GaAs PHEMT MMIC LOW NOISE AMPLIFIER
Feature AMPLIFIERS - LOW NOISE - SMT v03.0610 7 Typical Applications The HMC375LP3 / HMC375LP3E is ideal fo.
Manufacture Analog Devices
Datasheet
Download HMC375LP3E Datasheet



HMC375LP3E
v03.0610
7
Typical Applications
The HMC375LP3 / HMC375LP3E is ideal for
basestation receivers:
• GSM, GPRS & EDGE
• CDMA & W-CDMA
• DECT
Functional Diagram
HMC375LP3 / 375LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 1.7 - 2.2 GHz
Features
Noise Figure: 0.9 dB
Output IP3: +34 dBm
Gain: 17 dB
Very Stable Gain vs. Supply & Temperature
Single Supply: +5V @ 136 mA
50 Ohm Matched Output
General Description
The HMC375LP3 & HMC375LP3E high dynamic
range GaAs PHEMT MMIC Low Noise Amplifiers are
ideal for GSM & CDMA cellular basestation front-end
receivers operating between 1.7 and 2.2 GHz. This
LNA has been optimized to provide 0.9 dB noise
figure, 17 dB gain and +33 dBm output IP3 from
a single supply of +5V @ 136mA. Input and output
return losses are 14 dB typical with the LNA requiring
minimal external components to optimize the RF input
match, RF ground and DC bias. For applications
which require improved noise figure, please see the
HMC618LP3(E).
7 - 74
Electrical Specifications, TA = +25° C, Vs = +5V
Parameter
Min. Typ. Max.
Frequency Range
1.8 - 1.9
Gain
16.5 18.5
Gain Variation Over Temperature
0.014 0.021
Noise Figure
1.0 1.35
Input Return Loss
12
Output Return Loss
13
Reverse Isolation
35
Output Power for
1dB Compression (P1dB)
16 18.5
Saturated Output Power (Psat)
19.5
Output Third Order Intercept (IP3)
(-20 dBm Input Power per tone,
34
1 MHz tone spacing)
Supply Current (Idd)
136
Min. Typ. Max.
1.9 - 2.0
15.5 17.5
0.014 0.021
0.95 1.2
13
16
34
16 18.5
19.5
33.5
136
Min. Typ. Max.
2.0 - 2.1
15
17
0.014 0.021
0.9 1.2
14
11
34
15
18
19.5
33
136
Min. Typ. Max.
2.1 - 2.2
13
15
0.014 0.021
0.9 1.3
15
8
34
14.5 17.5
19.5
32.5
136
Units
GHz
dB
dB/°C
dB
dB
dB
dB
dBm
dBm
dBm
mA
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Trademarks and registered trademarks arAe tphepplriocpearttyioofntheSir urespppecotivret:owPnehrso. ne: 978-250-3A3p4p3licaotrionaSpuppsp@orht:iPtthitoen.ec: o1-m800-ANALOG-D



HMC375LP3E
v03.0610
Broadband Gain & Return Loss
25
15
5
-5
-15
S21
-25
S11
S22
-35
0.5
1
1.5
2
2.5
3
FREQUENCY (GHz)
Gain vs. Temperature
24
22
20
18
16
+25 C
14
+85 C
-40 C
12
10
1.7
1.8
1.9
2
2.1
2.2
FREQUENCY (GHz)
Gain vs. Vdd
22
20
18
16
14
+4.5 V
+5.0 V
+5.5 V
12
1.7
1.8
1.9
2
2.1
2.2
FREQUENCY (GHz)
HMC375LP3 / 375LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 1.7 - 2.2 GHz
7
Noise Figure vs. Temperature
1.5
+25 C
+85 C
1.3
-40 C
1.1
0.9
0.7
0.5
1.7
1.8
1.9
2
2.1
2.2
FREQUENCY (GHz)
Noise Figure vs. Vdd
1.5
+4.5 V
1.3
+5.0 V
+5.5 V
1.1
0.9
0.7
0.5
1.7
1.8
1.9
2
2.1
2.2
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
-15
-20
-25
+25 C
+85 C
-30
-40 C
-35
-40
-45
-50
1.7
1.8
1.9
2
2.1
2.2
FREQUENCY (GHz)
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Trademarks and registered trademarks arAe tphepplriocpearttyioofntheSir urespppecotivret:owPnehrso. ne: 978-250-3A3p4p3licaotrionaSpuppsp@orht:iPtthitoen.ec: o1-m800-ANALOG-D
7 - 75





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