HMC407MS8G

HMC407MS8G / 407MS8GE v04.1019 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 7 GHz Typical Applications This amplifier is ideal for use as a power amplifier for 5 - 7 GHz applications: UNII HiperLAN 9 Features Gain: 15 dB Saturated Power: +29 dBm 28% PAE Supply Voltage: +5V Power Down Capability No External Matching Required Functional Diagram General Description The HMC407MS8G & HMC407MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 5 and 7 GHz. The amplifier requires no external matching to achieve operation and is thus truly 50 Ohm matched at input and output. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. The amplifier provides 15 dB of gain, +29 dBm of saturated power at 28% PAE from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use. AMPLIFIERS - LINEAR & POWER - SMT 9-1 Electrical Specifications, TA = +25° C, Vs = 5V, Vpd = 5V Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Icq) Control Current (Ipd) Switching Speed Vpd = 0V/5V Vpd = 5V tON, tOFF Min. 10 21 32 Typ. 5-7 15 0.025 12 15 25 29 37 5.5 0.002 / 230 7 30 Max. 18 0.035 Min. Typ. Max. Un...