HMC413QS16G / 413QS16GE
v04.0505
GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz
LINEAR & POWER AMPLIFIERS - SMT
...
HMC413QS16G / 413QS16GE
v04.0505
GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz
LINEAR & POWER AMPLIFIERS - SMT
11
Typical Applications
This amplifier is ideal for use as a power/driver amplifier for 1.6 - 2.2 GHz applications: Cellular / PCS / 3G Portable & Infrastructure Wireless Local Loop
Functional Diagram
Features
Gain: 23 dB Saturated Power: +29.5 dBm 42% PAE Supply Voltage: +2.75V to +5V Power Down Capability Low External Part Count Included in the HMC-DK002 Designer’s Kit
General Description
The HMC413QS16G & HMC413QS16GE are high efficiency GaAs InGaP Heterojunction Bipolar
Transistor (HBT) MMIC Power amplifiers which operate between 1.6 and 2.2 GHz. The amplifier is packaged in a low cost, surface mount 16 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 23 dB of gain, +29.5 dBm of saturated power at 42% PAE from a +5V supply voltage. The amplifier can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/ current control.
11 - 50
Electrical Specifications, TA = +25° C, As a Function of Vs, Vpd = 3.6V
Parameter
Frequency
Vs= 3.6V
Vs= 5V
Min.
Typ.
Max.
Min.
Typ.
Gain
1.6 - 1.7 GHz
18
21
1.7 - 2.0 GHz
19
22
2.0 - 2.1 GHz
18
21
2.1 - 2.2 GHz
17
20
19
22
20
23
19
22
18
21
Gain Variation Over Temperature
1.6 - 2.2 GHz
0.025
0.035
0.025
Input Return Loss
1.6 - 2.2 GHz
10
10
Output Return Los...