DatasheetsPDF.com

HMC429LP4 Dataheets PDF



Part Number HMC429LP4
Manufacturers Analog Devices
Logo Analog Devices
Description MMIC VCO
Datasheet HMC429LP4 DatasheetHMC429LP4 Datasheet (PDF)

v02.0805 Typical Applications Low noise MMIC VCO w/Buffer Amplifier for: • 802.11a, HiperLAN WLAN • VSAT, UNII & Microwave Radio • Test Equipment & Industrial Controls • Military Functional Diagram 11 HMC429LP4 / 429LP4E MMIC VCO w/ BUFFER AMPLIFIER, 4.45 - 5.0 GHz Features Pout: +4.0 dBm Phase Noise: -105 dBc/Hz @100 KHz No External Resonator Needed Single Supply: 3V @ 30 mA QFN Leadless SMT Package, 16 mm2 General Description The HMC429LP4 & HMC429LP4E are GaAs InGaP Heterojunction Bipolar Tr.

  HMC429LP4   HMC429LP4


Document
v02.0805 Typical Applications Low noise MMIC VCO w/Buffer Amplifier for: • 802.11a, HiperLAN WLAN • VSAT, UNII & Microwave Radio • Test Equipment & Industrial Controls • Military Functional Diagram 11 HMC429LP4 / 429LP4E MMIC VCO w/ BUFFER AMPLIFIER, 4.45 - 5.0 GHz Features Pout: +4.0 dBm Phase Noise: -105 dBc/Hz @100 KHz No External Resonator Needed Single Supply: 3V @ 30 mA QFN Leadless SMT Package, 16 mm2 General Description The HMC429LP4 & HMC429LP4E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs with integrated resonators, negative resistance devices, varactor diodes, and buffer amplifiers. Covering 4.45 to 5.0 GHz, the VCO’s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator’s monolithic structure. Power output is 4.0 dBm typical from a single supply of 3.0V @ 30mA. The voltage controlled oscillator is packaged in a low cost leadless QFN 4x4 mm surface mount package. VCOS & PLOs - SMT 11 - 72 Electrical Specifications, TA = +25° C, Vcc = +3V Parameter Min. Frequency Range Power Output 1.0 SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output Tune Voltage (Vtune) 0 Supply Current (Icc) (Vcc = +3.0V) Tune Port Leakage Current Output Return Loss Harmonics 2nd 3rd Pulling (into a 2.0:1 VSWR) Pushing @ Vtune= +5V Frequency Drift Rate Typ. 4.45 - 5.0 4.0 -105 30 6 -11 -23 10 14 0.4 Max. 10 10 Units GHz dBm dBc/Hz V mA μA dB dBc dBc MHz pp MHz/V MHz/°C Information furnisheFd obyr ApnrailocgeD,edviceeslivisebreylie,veadntdo bteoacpcularacteeanod rrdelieabrlse.,Hpowleevaers, eno coFnotrapcritcHe, idtteitlieveMry,icanrdowtoapvleacCe oorrdpeorsr:aAtnioanlo:g Devices, Inc., rrlTiiecgrasehpdntseosemnosfaiisbtrhkigislrirtdayannpisdtaeardrtesiegsbsuiysmttheimear2edtpdml0bictyaraayAAtdiorneenlamspluooalhrgtrkofaDrstoheamevRrreicwitetosihsseuaefsopedurr.noi,dtSpsepeCurretscyaheinfo,iyecfnatoplhtrmiaeoftinoer ssrnretasfsnOouopyrberjiprcendadtcfirvtt,ieeentnogMotrecwrmhiOgnAaeehnnrtngsst0s.e-o1olwfif8Ainpthn2aeoatue4lotnagntsPotDotiehwcrveooi.ctwheNnesowr.e:.h9OPAihp7ntopte8inltiT-ecee2:a.c57tcih8o0on1no-m-S33lo2u3g9py4-p4W3o7ra0ty:0F,Pa•Ph.xOoOn:r.de9B:e7o1r x-8o8n9-0l12i0n05-e6A0,aNN-tA3woLr3wOw7wGo3o.-adDn,aMloAg.0c2o0m62-9106 v02.0805 Frequency vs. Tuning Voltage, T= 25°C 5.2 OUTPUT FREQUENCY (GHz) 5 4.8 4.6 Vcc=2.75V 4.4 Vcc=3.0V Vcc=3.25V 4.2 4 0 1 2 3 4 5 6 7 8 9 10 TUNING VOLTAGE (VOLTS) Sensitivity vs. Tuning Voltage, Vcc= +3V 340 SENSITIVITY (MHz/VOLT) 290 +25 C 240 +85 C -40 C 190 140 90 40 0 1 2 3 4 5 6 7 8 9 10 TUNING VOLTAGE (VOLTS) Phase Noise vs. Tuning Voltage -70 SSB PHASE NOISE (dBc/Hz) -80 -90 -100 10 KHz Offset 100 KHz Offset -110 -120 0 2 4 6 8 10 TUNING VOLTAGE (VOLTS) HMC429LP4 / 429LP4E MMIC VCO w/ BUFFER AMPLIFIER, 4.45 - 5.0 GHz Frequency vs. Tuning Voltage, Vcc= +3V 5.2 OUTPUT FREQUENCY (GHz) 5 4.8 4.6 +25 C 4.4 +85 C -40 C 4.2 4 0 1 2 3 4 5 6 7 8 9 10 TUNING VOLTAGE (VOLTS) Output Power vs. Tuning Voltage, Vcc= +3V 8 7 OUTPUT POWER (dBm) 6 5 4 3 2 +25 C +85 C 1 -40 C 0 012345678 TUNING VOLTAGE (VOLTS) 9 10 11 VCOS & PLOs - SMT Typical SSB Phase Noise @ Vtune= +5V 0 SSB PHASE NOISE (dBc/Hz) -25 +25 C -50 +85 C - 40 C -75 -100 -125 -150 103 104 105 106 107 OFFSET FREQUENCY (Hz) Information furnisheFd obyr ApnrailocgeD,edviceeslivisebreylie,veadntdo bteoacpcularacteeanod rrdelieabrlse.,Hpowleevaers, eno coFnotrapcritcHe, idtteitlieveMry,icanrdowtoapvleacCe oorrdpeorsr:aAtnioanlo:g Devices, Inc., rrlTiiecgrasehpdntseosemnosfaiisbtrhkigislrirtdayannpisdtaeardrtesiegsbsuiysmttheimear2edtpdml0bictyaraayAAtdiorneenlamspluooalhrgtrkofaDrstoheamevRrreicwitetosihsseuaefsopedurr.noi,dtSpsepeCurretscyaheinfo,iyecfnatoplhtrmiaeoftinoer ssrnretasfsnOouopyrberjiprcendadtcfirvtt,ieeentnogMotrecwrmhiOgnAaeehnnrtngsst0s.e-o1olwfif8Ainpthn2aeoatue4lotnagntsPotDotiehwcrveooi.ctwheNnesowr.e:.h9OPAihp7ntopte8inltiT-ecee2:a.c57tcih8o0on1no-m-S33lo2u3g9py4-p4W3o7ra0ty:0F,Pa•Ph.xOoOn:r.de9B:e7o1r x-8o8n9-0l12i0n05-e6A0,aNN-tA3woLr3wOw7wGo3o.-adDn,aMloAg.0c2o0m62-9106 11 - 73 v02.0805 HMC429LP4 / 429LP4E MMIC VCO w/ BUFFER AMPLIFIER, 4.45 - 5.0 GHz 11 Absolute Maximum Ratings Vcc Vtune Channel Temperature Continuous Pdiss (T = 85°C) (derate 6.28 mW/°C above 85°C) Storage Temperature Operating Temperature +3.5 Vdc 0 to +11V 135 °C 565 W -65 to +150 °C -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Typical Supply Current vs. Vcc Vcc (V) Icc (mA) 2.75 21 3.0 30 3.25 38 Note: VCO will operate over full voltage range shown above. VCOS & PLOs - SMT 11 - 74 Package Information NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROU.


HMC427LP3E HMC429LP4 HMC429LP4E


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)