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HMC431LP4E Dataheets PDF



Part Number HMC431LP4E
Manufacturers Analog Devices
Logo Analog Devices
Description MMIC VCO
Datasheet HMC431LP4E DatasheetHMC431LP4E Datasheet (PDF)

v04.1106 Typical Applications Low noise MMIC VCO w/Buffer Amplifier for C-Band applications such as: • 802.11a & HiperLAN WLAN • VSAT Radios • UNII & Point-to-Point Radios Functional Diagram 11 HMC431LP4 / 431LP4E MMIC VCO w/ BUFFER AMPLIFIER, 5.5 - 6.1 GHz Features Pout: +2 dBm Phase Noise: -102 dBc/Hz @100 kHz No External Resonator Needed Single Supply: 3V @ 27 mA 16mm2 Leadless SMT Package General Description The HMC431LP4 & HMC431LP4E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) M.

  HMC431LP4E   HMC431LP4E


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v04.1106 Typical Applications Low noise MMIC VCO w/Buffer Amplifier for C-Band applications such as: • 802.11a & HiperLAN WLAN • VSAT Radios • UNII & Point-to-Point Radios Functional Diagram 11 HMC431LP4 / 431LP4E MMIC VCO w/ BUFFER AMPLIFIER, 5.5 - 6.1 GHz Features Pout: +2 dBm Phase Noise: -102 dBc/Hz @100 kHz No External Resonator Needed Single Supply: 3V @ 27 mA 16mm2 Leadless SMT Package General Description The HMC431LP4 & HMC431LP4E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs with integrated resonators, negative resistance devices, varactor diodes, and buffer amplifiers. The VCO’s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator’s monolithic structure. Power output is 2 dBm typical from a 3V supply voltage. The voltage controlled oscillator is packaged in a low cost leadless QFN 4 x 4 mm surface mount package. VCOS & PLOs - SMT 11 - 84 Electrical Specifications, TA = +25° C, Vcc = +3V Parameter Min. Frequency Range Power Output -1 SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output Tune Voltage (Vtune) 0 Supply Current (Icc) (Vcc= 3.0V) Tune Port Leakage Current Output Return Loss Harmonics 2nd 3rd Pulling (into a 2.0:1 VSWR) Pushing @ Vtune= +5V Frequency Drift Rate Typ. 5.5 - 6.1 2 -102 27 6 -15 -30 9 12 0.8 Max. 10 10 Units GHz dBm dBc/Hz V mA μA dB dBc dBc MHz pp MHz/V MHz/°C Information furnisheFd obyr ApnrailocgeD,edviceeslivisebreylie,veadntdo bteoacpcularacteeanod rrdelieabrlse.,Hpowleevaers, eno coFnotrapcritcHe, idtteitlieveMry,icanrdowtoapvleacCe oorrdpeorsr:aAtnioanlo:g Devices, Inc., rrlTiiecgrasehpdntseosemnosfaiisbtrhkigislrirtdayannpisdtaeardrtesiegsbsuiysmttheimear2edtpdml0bictyaraayAAtdiorneenlamspluooalhrgtrkofaDrstoheamevRrreicwitetosihsseuaefsopedurr.noi,dtSpsepeCurretscyaheinfo,iyecfnatoplhtrmiaeoftinoer ssrnretasfsnOouopyrberjiprcendadtcfirvtt,ieeentnogMotrecwrmhiOgnAaeehnnrtngsst0s.e-o1olwfif8Ainpthn2aeoatue4lotnagntsPotDotiehwcrveooi.ctwheNnesowr.e:.h9OPAihp7ntopte8inltiT-ecee2:a.c57tcih8o0on1no-m-S33lo2u3g9py4-p4W3o7ra0ty:0F,Pa•Ph.xOoOn:r.de9B:e7o1r x-8o8n9-0l12i0n05-e6A0,aNN-tA3woLr3wOw7wGo3o.-adDn,aMloAg.0c2o0m62-9106 v04.1106 Frequency vs. Tuning Voltage, T= 25°C 6.6 6.4 OUTPUT FREQUENCY (GHz) 6.2 6 5.8 5.6 5.4 Vcc= 2.75V Vcc= 3.0V 5.2 Vcc= 3.25V 5 4.8 0 1 2 3 4 5 6 7 8 9 10 TUNING VOLTAGE (VOLTS) Sensitivity vs. Tuning Voltage, Vcc= +3V SENSITIVITY (MHz/VOLT) 500 450 400 350 300 +25 C +85 C 250 -40 C 200 150 100 50 0 0 1 2 3 4 5 6 7 8 9 10 TUNING VOLTAGE (VOLTS) Phase Noise vs. Tuning Voltage -70 -75 SSB PHASE NOISE (dBc/Hz) -80 -85 -90 10kHz offset -95 100kHz offset -100 -105 -110 012345678 TUNING VOLTAGE (VOLTS) 9 10 HMC431LP4 / 431LP4E MMIC VCO w/ BUFFER AMPLIFIER, 5.5 - 6.1 GHz Frequency vs. Tuning Voltage, Vcc= +3V 6.6 6.4 OUTPUT FREQUENCY (GHz) 6.2 6 5.8 5.6 5.4 +25 C +85 C 5.2 -40 C 5 4.8 0 1 2 3 4 5 6 7 8 9 10 TUNING VOLTAGE (VOLTS) Output Power vs. Tuning Voltage, Vcc= +3V 10 8 OUTPUT POWER (dBm) 6 4 2 0 -2 -4 +25 C +85 C -6 -40 C -8 -10 012345678 TUNING VOLTAGE (VOLTS) 9 10 Typical SSB Phase Noise @ Vtune= +5V 0 SSB PHASE NOISE (dBc/Hz) -25 +25 C +85 C -50 -40 C -75 -100 -125 -150 103 104 105 106 107 OFFSET FREQUENCY (Hz) VCOS & PLOs - SMT 11 Information furnisheFd obyr ApnrailocgeD,edviceeslivisebreylie,veadntdo bteoacpcularacteeanod rrdelieabrlse.,Hpowleevaers, eno coFnotrapcritcHe, idtteitlieveMry,icanrdowtoapvleacCe oorrdpeorsr:aAtnioanlo:g Devices, Inc., rrlTiiecgrasehpdntseosemnosfaiisbtrhkigislrirtdayannpisdtaeardrtesiegsbsuiysmttheimear2edtpdml0bictyaraayAAtdiorneenlamspluooalhrgtrkofaDrstoheamevRrreicwitetosihsseuaefsopedurr.noi,dtSpsepeCurretscyaheinfo,iyecfnatoplhtrmiaeoftinoer ssrnretasfsnOouopyrberjiprcendadtcfirvtt,ieeentnogMotrecwrmhiOgnAaeehnnrtngsst0s.e-o1olwfif8Ainpthn2aeoatue4lotnagntsPotDotiehwcrveooi.ctwheNnesowr.e:.h9OPAihp7ntopte8inltiT-ecee2:a.c57tcih8o0on1no-m-S33lo2u3g9py4-p4W3o7ra0ty:0F,Pa•Ph.xOoOn:r.de9B:e7o1r x-8o8n9-0l12i0n05-e6A0,aNN-tA3woLr3wOw7wGo3o.-adDn,aMloAg.0c2o0m62-9106 11 - 85 v04.1106 Absolute Maximum Ratings Vcc Vtune Channel Temperature Continuous Pdiss (T = 85°C) (derate 6.28 mW/°C above 85°C) Storage Temperature Operating Temperature ESD Sensitivity (HBM) +3.5 Vdc 0 to +11V 135 °C 565 W -65 to +150 °C -40 to +85 °C Class 1A 11 Outline Drawing HMC431LP4 / 431LP4E MMIC VCO w/ BUFFER AMPLIFIER, 5.5 - 6.1 GHz Typical Supply Current vs. Vcc Vcc (V) Icc (mA) 2.75 19 3.0 27 3.25 34 Note: VCO will operate over full voltage range shown above. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS VCOS & PLOs - SMT 11 - 86 NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6.


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