Document
v04.1106
Typical Applications
Low noise MMIC VCO w/Buffer Amplifier for C-Band applications such as: • 802.11a & HiperLAN WLAN • VSAT Radios • UNII & Point-to-Point Radios
Functional Diagram
11
HMC431LP4 / 431LP4E
MMIC VCO w/ BUFFER AMPLIFIER, 5.5 - 6.1 GHz
Features
Pout: +2 dBm Phase Noise: -102 dBc/Hz @100 kHz No External Resonator Needed Single Supply: 3V @ 27 mA 16mm2 Leadless SMT Package
General Description
The HMC431LP4 & HMC431LP4E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs with integrated resonators, negative resistance devices, varactor diodes, and buffer amplifiers. The VCO’s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator’s monolithic structure. Power output is 2 dBm typical from a 3V supply voltage. The voltage controlled oscillator is packaged in a low cost leadless QFN 4 x 4 mm surface mount package.
VCOS & PLOs - SMT
11 - 84
Electrical Specifications, TA = +25° C, Vcc = +3V
Parameter
Min.
Frequency Range
Power Output
-1
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output
Tune Voltage (Vtune)
0
Supply Current (Icc) (Vcc= 3.0V)
Tune Port Leakage Current
Output Return Loss
Harmonics 2nd 3rd
Pulling (into a 2.0:1 VSWR)
Pushing @ Vtune= +5V
Frequency Drift Rate
Typ. 5.5 - 6.1
2 -102
27
6
-15 -30 9 12 0.8
Max.
10 10
Units GHz dBm dBc/Hz
V mA μA dB
dBc dBc MHz pp MHz/V MHz/°C
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v04.1106
Frequency vs. Tuning Voltage, T= 25°C
6.6
6.4
OUTPUT FREQUENCY (GHz)
6.2
6
5.8
5.6
5.4
Vcc= 2.75V
Vcc= 3.0V
5.2
Vcc= 3.25V
5
4.8 0 1 2 3 4 5 6 7 8 9 10 TUNING VOLTAGE (VOLTS)
Sensitivity vs. Tuning Voltage, Vcc= +3V
SENSITIVITY (MHz/VOLT)
500
450
400
350
300
+25 C
+85 C
250
-40 C
200
150
100
50
0 0 1 2 3 4 5 6 7 8 9 10
TUNING VOLTAGE (VOLTS)
Phase Noise vs. Tuning Voltage
-70
-75
SSB PHASE NOISE (dBc/Hz)
-80
-85
-90
10kHz offset
-95
100kHz offset
-100
-105
-110 012345678 TUNING VOLTAGE (VOLTS)
9 10
HMC431LP4 / 431LP4E
MMIC VCO w/ BUFFER AMPLIFIER, 5.5 - 6.1 GHz
Frequency vs. Tuning Voltage, Vcc= +3V
6.6
6.4
OUTPUT FREQUENCY (GHz)
6.2
6
5.8
5.6
5.4
+25 C
+85 C
5.2
-40 C
5
4.8 0 1 2 3 4 5 6 7 8 9 10 TUNING VOLTAGE (VOLTS)
Output Power vs. Tuning Voltage, Vcc= +3V
10
8
OUTPUT POWER (dBm)
6
4
2
0
-2
-4
+25 C
+85 C
-6
-40 C
-8
-10 012345678 TUNING VOLTAGE (VOLTS)
9 10
Typical SSB Phase Noise @ Vtune= +5V
0
SSB PHASE NOISE (dBc/Hz)
-25
+25 C
+85 C
-50
-40 C
-75
-100
-125
-150
103
104
105
106
107
OFFSET FREQUENCY (Hz)
VCOS & PLOs - SMT
11
Information furnisheFd obyr ApnrailocgeD,edviceeslivisebreylie,veadntdo bteoacpcularacteeanod rrdelieabrlse.,Hpowleevaers, eno coFnotrapcritcHe, idtteitlieveMry,icanrdowtoapvleacCe oorrdpeorsr:aAtnioanlo:g Devices, Inc., rrlTiiecgrasehpdntseosemnosfaiisbtrhkigislrirtdayannpisdtaeardrtesiegsbsuiysmttheimear2edtpdml0bictyaraayAAtdiorneenlamspluooalhrgtrkofaDrstoheamevRrreicwitetosihsseuaefsopedurr.noi,dtSpsepeCurretscyaheinfo,iyecfnatoplhtrmiaeoftinoer ssrnretasfsnOouopyrberjiprcendadtcfirvtt,ieeentnogMotrecwrmhiOgnAaeehnnrtngsst0s.e-o1olwfif8Ainpthn2aeoatue4lotnagntsPotDotiehwcrveooi.ctwheNnesowr.e:.h9OPAihp7ntopte8inltiT-ecee2:a.c57tcih8o0on1no-m-S33lo2u3g9py4-p4W3o7ra0ty:0F,Pa•Ph.xOoOn:r.de9B:e7o1r x-8o8n9-0l12i0n05-e6A0,aNN-tA3woLr3wOw7wGo3o.-adDn,aMloAg.0c2o0m62-9106
11 - 85
v04.1106
Absolute Maximum Ratings
Vcc Vtune Channel Temperature Continuous Pdiss (T = 85°C) (derate 6.28 mW/°C above 85°C) Storage Temperature Operating Temperature ESD Sensitivity (HBM)
+3.5 Vdc 0 to +11V 135 °C
565 W
-65 to +150 °C -40 to +85 °C Class 1A
11
Outline Drawing
HMC431LP4 / 431LP4E
MMIC VCO w/ BUFFER AMPLIFIER, 5.5 - 6.1 GHz
Typical Supply Current vs. Vcc
Vcc (V)
Icc (mA)
2.75
19
3.0
27
3.25
34
Note: VCO will operate over full voltage range shown above.
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
VCOS & PLOs - SMT
11 - 86
NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6.