HMC450QS16G

HMC450QS16G / 450QS16GE v02.0406 GaAs InGaP HBT MMIC POWER AMPLIFIER, 0.8 - 1.0 GHz 11 Typical Applications The HMC450QS16G / HMC450QS16GE is ideal for power and driver amplifier applications: GSM, GPRS, & Edge CDMA & WCDMA Base Stations & Repeaters Functional Diagram Features Gain: 26 dB 32% PAE @ 28.5 dBm Output Power +40 dBm Output IP3 Integrated Power Control (Vpd) Included in the HMC-DK002 Designer’s Kit General Description The HMC450QS16G & HMC450QS16GE are high efficiency GaAs InGaP HBT Medium Power MMIC amplifiers operating between 800 and 1000 MHz. The amplifier is packaged in a low cost, surface mount 16 lead package and offers the same pinout and functionality as the higher band HMC413QS16G 1.62.3 GHz PA. With a minimum of external components, the amplifier provides 26 dB of gain, +40 dBm OIP3 and +28.5 dBm of saturated power from a +5V supply voltage. The integrated power control (Vpd) can be used for full power down or RF output power/current control. The combination of high gain and high output IP3 make the HMC450QS16G & HMC450QS16GE ideal linear drivers for Cellular, PCS & 3G applications. LINEAR & POWER AMPLIFIERS - SMT 11 - 114 Electrical Specifications, TA = +25° C, Vs = +5V, Vpd = +4V [1] Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Min. Typ. Max. 0.8 - 1.0 23 26 0.015 0.025 17 13 Units GHz dB dB/°C dB dB Output Power for 1 dB Compression (P1dB) 23 26 dBm Saturated Output ...