InGaP HBT. HMC452QS16GE Datasheet

HMC452QS16GE HBT. Datasheet pdf. Equivalent

Part HMC452QS16GE
Description InGaP HBT
Feature HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz LINEAR & POWER A.
Manufacture Analog Devices
Datasheet
Download HMC452QS16GE Datasheet



HMC452QS16GE
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
11
11 - 134
Typical Applications
Features
The HMC452QS16G / HMC452QS16GE is ideal for
applications requiring a high dynamic range amplifier:
• GSM, GPRS & EDGE
• CDMA & W-CDMA
• CATV/Cable Modem
• Fixed Wireless & WLL
Output IP3: +48 dBm
22.5 dB Gain @ 400 MHz
9 dB Gain @ 2100 MHz
53% PAE @ +31 dBm Pout
+24 dBm CDMA2000 Channel Power@ -45 dBc ACP
Single +5V Supply
Integrated Power Control (VPD)
QSOP16G SMT Package: 29.4 mm2
Functional Diagram
General Description
The HMC452QS16G & HMC452QS16GE are high
dynamic range GaAs InGaP Heterojunction Bipolar
Transistor (HBT) 1 watt MMIC power amplifiers
operating between 0.4 and 2.2 GHz. Packaged in a
miniature 16 lead QSOP plastic package, the amp-
lifier gain is typically 22.5 dB at 0.4 GHz and 9 dB
at 2.1 GHz. Utilizing a minimum number of external
components and a single +5V supply, the amplifier
output IP3 can be optimized to +43 dBm at 0.4 GHz
or +48 dBm at 2.1 GHz. The power control (VPD)
can be used for full power down or RF output power/
current control. The high output IP3 and PAE make
the HMC452QS16G(E)ideal power amplifiers for
Cellular/PCS/3G, WLL, ISM and Fixed Wireless
applications.
Electrical Specifications, TA = +25°C, Vs= +5V, VPD = +5V [1]
Parameter
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range
400 - 410
450 - 496
810 - 960
1710 - 1990
2010 - 2170
MHz
Gain
20 22.5
19 21.5
13 15.5
7.5 10
6.5 9
dB
Gain Variation Over
Temperature
0.012 0.02
0.012 0.02
0.012 0.02
0.012 0.02
0.012 0.02 dB/C
Input Return Loss
13
15
9
17
11
dB
Output Return Loss
7
8
12
15
20
dB
Output Power for 1dB
27.5 30.5
Compression (P1dB)
27.5 30.5
27 30
28 31
28 31
dBm
Saturated Output
31
31
31
31.5
32.5
dBm
Power (Psat)
Output Third Order
Intercept (IP3) [2]
40 43
41 44
45 48
45 48
45 48
dBm
Noise Figure
7
7
7
7
7.5
dB
Supply Current (Icq)
485
485
485
485
485
mA
Control Current (IPD)
10
10
10
10
10
mA
[1] Specifications and data reflect HMC452QS16G measured using the respective application circuits for each designated frequency band found
herein. Contact the HMC Applications Group for assistance in optimizing performance for your application.
[2] Two-tone input power of -10 dBm per tone, 1 MHz spacing.
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Order On-line Trademarks and registered trademarks are the property of their respective owners. at www.hAiptptilticea.tcioonmSupport: Phone: 1-800-ANALOG-D



HMC452QS16GE
v01.0205
HMC452QS16G / 452QS16GE
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Broadband Gain
& Return Loss @ 400 MHz
25
20
15
10
S21
S11
5
S22
0
-5
-10
-15
0.1
0.2
0.3
0.4
0.5
0.6
0.7
FREQUENCY (GHz)
Input Return Loss
vs. Temperature @ 400 MHz
0
-2
-4
+25 C
+85 C
-6
-40 C
-8
-10
-12
-14
-16
0.35
0.37
0.39
0.41
0.43
0.45
FREQUENCY (GHz)
Gain vs. Temperature @ 400 MHz
25
24
23
22
21
20
19
18
17
16
15
14
13
12
0.35
+25 C
+85 C
-40 C
0.37
0.39
0.41
0.43
FREQUENCY (GHz)
0.45
Output Return Loss
vs. Temperature @ 400 MHz
0
-2
-4
-6
-8
-10
-12
-14
-16
0.35
+25 C
+85 C
-40 C
0.37
0.39
0.41
0.43
FREQUENCY (GHz)
0.45
11
P1dB vs. Temperature @ 400 MHz
34
33
32
31
30
29
+25 C
28
+85 C
27
-40 C
26
25
24
0.35
0.37
0.39
0.41
0.43
0.45
FREQUENCY (GHz)
Psat vs. Temperature @ 400 MHz
34
33
32
31
30
29
28
27
26
25
24
0.35
+25 C
+85 C
-40 C
0.37
0.39
0.41
0.43
FREQUENCY (GHz)
0.45
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Order On-line Trademarks and registered trademarks are the property of their respective owners. at www.hAiptptilticea.tcioonmSupport: Phone: 1-800-ANALOG-D
11 - 135





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