InGaP HBT. HMC452ST89 Datasheet

HMC452ST89 HBT. Datasheet pdf. Equivalent

Part HMC452ST89
Description InGaP HBT
Feature HMC452ST89 / 452ST89E v02.0710 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Typical Applicatio.
Manufacture Analog Devices
Datasheet
Download HMC452ST89 Datasheet



HMC452ST89
HMC452ST89 / 452ST89E
v02.0710
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Typical Applications
Features
The HMC452ST89 / HMC452ST89E is ideal for
Output IP3: +49 dBm
applications requiring a high dynamic range amplifier:
21 dB Gain @ 400 MHz
• GSM, GPRS & EDGE
9 dB Gain @ 2100 MHz
• CDMA & W-CDMA
50% PAE @ +31 dBm Pout
• CATV/Cable Modem
9
• Fixed Wireless
+25 dBm CDMA2000 Channel Power
@ -45 dBc ACP
Included in the HMC-DK002 Designer’s Kit
Functional Diagram
General Description
The HMC452ST89 & HMC452ST89E are high
dynamic range GaAs InGaP HBT 1 Watt MMIC power
amplifiers operating from 0.4 to 2.2 GHz and packaged
in industry standard SOT89 packages. Utilizing a
minimum number of external components and a single
+5V supply, the amplifier output IP3 can be optimized
to +45 dBm at 0.4 GHz or +49 dBm at 2.1 GHz. The
high output IP3 and PAE make the HMC452ST89 &
HMC452ST89E ideal power amplifiers for Cellular/
PCS/3G and Fixed Wireless applications.
9 - 124
Electrical Specifications, TA = +25°C, Vs= +5V [1]
Parameter
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range
400 - 410
450 - 496
810 - 960
1710 - 1990
2010 - 2170
MHz
Gain
19 21
18 20
13.5 15.5
7 9.5
7
9
dB
Gain Variation Over
Temperature
0.012 0.02
0.012 0.02
0.012 0.02
0.012 0.02
0.012 0.02
dB /
°C
Input Return Loss
22
16
13
13
20
dB
Output Return Loss
11
11
14
15
15
dB
Output Power for
1dB
27 30
Compression (P1dB)
27 30
27.5 30.5
28 31
28.5 31.5
dBm
Saturated Output
Power (Psat)
30.5
30.5
31.5
31.5
32
dBm
Output Third Order
Intercept (IP3) [2]
42 45
42 45
44 47
45 48
46 49
dBm
Noise Figure
6.5
7
6.5
6.5
6.5
dB
Supply Current (Icq)
510
510
510
510
510
mA
[1] Specifications and data reflect HMC452ST89 measured using the respective application circuits for each designated frequency band found
herein. Contact the HMC Applications Group for assistance in optimizing performance for your application.
[2] Two-tone input power of 0 dBm per tone, 1 MHz spacing.
IrrliniecgfseohpntrsFomsenoaosftiisirbtohingilprirtdyafrunpiirstcnaeairdsetsihesb,esuydmdthimebaedtyplmlbiiAcvyaanPyeAtaiorlhnroenaygsoluoonlDargt eofenDrvtohe:idmcev9ericwistt7esoissi8usefspo-beur2.neliadtSl5iseepcvur0eeseca-deinf,3iyoctno3aoprtrdia4boftenoee3srnartascsnoucyrb:ujipernHFaacfrtttaeiienttnogxtatiecn:rtmhdieg9aehnrn7teMgstls8eiaooibwf-cfl2Aieptrhn.5aooatHue0lwotong-wntas3oDeotvvi3ecreeveo7ri,.cth3eNCnesoor.orpFOPOoohnrroredanpTeetreii:rocc7enhO8,n,1nod-23le-o02llgii9vnyAe-e4rWly7pa,a0hyta0,anw•PdR.OwOtoor.wdBaep.dohrlaxo,ictn9Cetl1iitn0hoee6re.d,caleNmtorwosms:rwwfAowonro.daadln,o,agMMloADAge.0cv02oic10me68s22,-49In10c.6,
Trademarks and registered trademarks arAe tphepplriocpearttyioofntheSir urespppecotivret:owPnehrso. ne: 978-250-3A3p4p3licaotrionaSpuppsp@orht:iPtthitoen.ec: o1-m800-ANALOG-D



HMC452ST89
v02.0710
Broadband Gain
& Return Loss @ 400 MHz
25
20
15
10
S21
S11
5
S22
0
-5
-10
-15
0.1
0.2
0.3
0.4
0.5
0.6
0.7
FREQUENCY (GHz)
Input Return Loss
vs. Temperature @ 400 MHz
0
-5
-10
+25 C
+85 C
-15
-40 C
-20
-25
-30
-35
0.35
0.37
0.39
0.41
0.43
0.45
FREQUENCY (GHz)
P1dB vs. Temperature @ 400 MHz
34
33
32
31
30
29
28
27
26
25
24
0.35
+25 C
+85 C
-40 C
0.37
0.39
0.41
0.43
FREQUENCY (GHz)
0.45
HMC452ST89 / 452ST89E
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Gain vs. Temperature @ 400 MHz
24
23
22
21
20
19
18
17
16
15
14
13
12
0.35
+25 C
+85 C
-40 C
0.37
0.39
0.41
0.43
FREQUENCY (GHz)
0.45
Output Return Loss
vs. Temperature @ 400 MHz
0
-2
-4
+25 C
+85 C
-6
-40 C
-8
-10
-12
-14
-16
0.35
0.37
0.39
0.41
0.43
0.45
FREQUENCY (GHz)
Psat vs. Temperature @ 400 MHz
34
33
32
31
30
29
28
27
26
25
24
0.35
+25 C
+85 C
-40 C
0.37
0.39
0.41
0.43
FREQUENCY (GHz)
0.45
9
IrrliniecgfseohpntrsFomsenoaosftiisirbtohingilprirtdyafrunpiirstcnaeairdsetsihesb,esuydmdthimebaedtyplmlbiiAcvyaanPyeAtaiorlhnroenaygsoluoonlDargt eofenDrvtohe:idmcev9ericwistt7esoissi8usefspo-beur2.neliadtSl5iseepcvur0eeseca-deinf,3iyoctno3aoprtrdia4boftenoee3srnartascsnoucyrb:ujipernHFaacfrtttaeiienttnogxtatiecn:rtmhdieg9aehnrn7teMgstls8eiaooibwf-cfl2Aieptrhn.5aooatHue0lwotong-wntas3oDeotvvi3ecreeveo7ri,.cth3eNCnesoor.orpFOPOoohnrroredanpTeetreii:rocc7enhO8,n,1nod-23le-o02llgii9vnyAe-e4rWly7pa,a0hyta0,anw•PdR.OwOtoor.wdBaep.dohrlaxo,ictn9Cetl1iitn0hoee6re.d,caleNmtorwosms:rwwfAowonro.daadln,o,agMMloADAge.0cv02oic10me68s22,-49In10c.6,
Trademarks and registered trademarks arAe tphepplriocpearttyioofntheSir urespppecotivret:owPnehrso. ne: 978-250-3A3p4p3licaotrionaSpuppsp@orht:iPtthitoen.ec: o1-m800-ANALOG-D
9 - 125





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)