HMC453QS16G / 453QS16GE
v01.0205
InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz
LINEAR & POWER AMPLIFIERS - SMT
1...
HMC453QS16G / 453QS16GE
v01.0205
InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz
LINEAR & POWER AMPLIFIERS - SMT
11
11 - 178
Typical Applications
The HMC453QS16G / HMC453QS16GE is ideal for applications requiring a high dynamic range amplifier: GSM, GPRS & EDGE CDMA & W-CDMA CATV/Cable Modem Fixed Wireless & WLL
Functional Diagram
Features
Output IP3: +51 dBm
21.5 dB Gain @ 400 MHz
8 dB Gain @ 2100 MHz
45% PAE @ +32 dBm Pout
+25 dBm CDMA2000 Channel Power@ -45 dBc ACP
Single +5V Supply
Integrated Power Control (VPD)
QSOP16G SMT Package: 29.4 mm2
General Description
The HMC453QS16G & HMC453QS16GE are high dynamic range GaAs InGaP Heterojunction Bipolar
Transistor (HBT) 1.6 watt MMIC power amplifiers operating between 0.4 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 21.5 dB at 0.4 GHz and 8 dB at 2.1 GHz. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +47 dBm at 0.4 GHz or +51 dBm at 2.1 GHz. The power control (VPD) can be used for full power down or RF output power/ current control. The high output IP3 and PAE make the HMC453QS16G(E) ideal power amplifiers for Cellular/PCS/3G, WLL, ISM and Fixed Wireless applications.
Electrical Specifications, TA = +25°C, Vs= +5V, VPD = +5V [1]
Parameter
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range
400 - 410
450 - 496
810 - 960
1710 - 1990
20...