HMC457QS16G

HMC457QS16G / 457QS16GE v03.0907 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz 11 Typical Applications The HMC457QS16G / HMC457QS16GE is ideal for applications requiring a high dynamic range amplifier: CDMA & W-CDMA GSM, GPRS & Edge Base Stations & Repeaters Features Output IP3: +46 dBm Gain: 27 dB @ 1900 MHz 48% PAE @ +32 dBm Pout +25 dBm W-CDMA Channel Power @ -50 dBc ACPR Integrated Power Control (Vpd) QSOP16G SMT Package: 29.4 mm2 Included in the HMC-DK002 Designer’s Kit LINEAR & POWER AMPLIFIERS - SMT Functional Diagram General Description The HMC457QS16G & HMC457QS16GE are high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifiers operating between 1.7 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 27 dB from 1.7 to 2.0 GHz and 25 dB from 2.0 to 2.2 GHz. Utilizing a minimum number of external components, the amplifier output IP3 can be optimized to +45 dBm. The power control (Vpd) can be used for full power down or RF output power/ current control. The high output IP3 and PAE make the HMC457QS16G & HMC457QS16GE ideal power amplifiers for Cellular/3G base station & repeater applications. 11 - 240 Electrical Specifications, TA = +25°C, Vs= +5V, Vpd = +5V, Vbias = +5V [1] Parameter Frequency Range Min. Typ. Max. 1710 - 1990 Min. Typ. Max. 2010 - 2170 Units MHz Gain 24 27 22 25 dB Gain Variation Over Temperature 0.025 0.035 0.025 0.035 dB / °C ...