HMC459

LINEAR & POWER AMPLIFIERS - CHIP v01.1007 Typical Applications The HMC459 wideband driver is ideal for: Telecom Infrastructure 3 Microwave Radio & VSAT Military & Space Test Instrumentation Functional Diagram HMC459 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 18 GHz Features P1dB Output Power: +25 dBm Gain: 17 dB Output IP3: +31.5 dBm Supply Voltage: +8V @ 290 mA 50 Ohm Matched Input/Output Die Size: 3.12 x 1.63 x 0.1 mm General Description The HMC459 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 18 GHz. The amplifier provides 17 dB of gain, +31.5 dBm output IP3 and +25 dBm of output power at 1 dB gain compression while requiring 290 mA from a +8V supply. Gain flatness is good making the HMC459 ideal for EW, ECM and radar driver amplifier applications. The HMC459 amplifier I/O’s are internally matched to 50 Ohms facilitating easy integration into Multi-Chip-Modules (MCMs). All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils). 3 - 28 Electrical Specifications, TA = +25° C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA* Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min Typ Max Units Frequency Range DC - 2.0 DC - 6.0 DC - 10.0 DC - 18.0 GHz Gain 16.5 18.5 15 18 14 17 9 12 dB Gain Flatness ±0.5 ±0.75 ±0.75 dB Gain Variation Over Temperature 0.02 0.03 0.02 0.03 0.03 0.04 0.035 0.045 dB/ °C Input Return Loss Output Return Loss ...