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HMC464LP5E

Analog Devices

GaAs PHEMT MMIC

LINEAR &POWER AMPLIFIERS -SMT v04.0218 Typical Applications The HMC464LP5E is ideal for: • Telecom Infrastructure • Mic...


Analog Devices

HMC464LP5E

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Description
LINEAR &POWER AMPLIFIERS -SMT v04.0218 Typical Applications The HMC464LP5E is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military EW, ECM & C3I Test Instrumentation Fiber Optics Functional Diagram HMC464LP5E GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz Features P1dB Output Power: +26 dBm Gain: 14 dB Output IP3: +30 dBm Supply Voltage: +8V @ 290 mA 50 Ohm Matched Input/Output 25 mm2 Leadless SMT Package General Description The HMC464LP5E is a GaAs MMIC PHEMT Distributed Power Amplifiers in leadless 5 x 5 mm surface mount packages which operate between 2 and 20 GHz. The amplifier provides 14 dB of gain, +30 dBm output IP3 and +26 dBm of output power at 1 dB gain compression while requiring 290 mA from a +8V supply. Gain flatness is good from 2 - 18 GHz making the HMC464LP5E ideal for EW, ECM and radar driver amplifiers as well as test equipment applications. The wideband amplifier I/O’s are internally matched to 50 Ohms. Electrical Specifications, TA = +25° C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA [1] Parameter Min. Typ. Max. Frequency Range 2.0 - 6.0 Gain 12 14 Gain Flatness ±0.5 Gain Variation Over Temperature 0.025 0.035 Input Return Loss 15 Output Return Loss 15 Output Power for 1 dB Compression (P1dB) 23.5 26.5 Saturated Output Power (Psat) 27.5 Output Third Order Intercept (IP3) 32 Noise Figure 4.0 Supply Current (Idd) (Vdd= 8V, Vgg= -0.5V Typ.) 290 [1] Adjust Vgg1 between -2 to 0V to achieve Idd = 290 mA typical. Min. Typ....




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