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HMC475ST89

Analog Devices

InGaP HBT GAIN BLOCK MMIC AMPLIFIER

HMC475ST89 / 475ST89E v02.0710 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.5 GHz AMPLIFIERS - DRIVER & GAIN BLOCK - S...


Analog Devices

HMC475ST89

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Description
HMC475ST89 / 475ST89E v02.0710 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.5 GHz AMPLIFIERS - DRIVER & GAIN BLOCK - SMT 8 8 - 74 Typical Applications Features The HMC475ST89 / HMC475ST89E is an ideal RF/IF P1dB Output Power: +22 dBm gain block & LO or PA driver: Gain: 21.5 dB Cellular / PCS / 3G Output IP3: +35 dBm Fixed Wireless & WLAN Cascadable 50 Ohm I/Os CATV, Cable Modem & DBS Microwave Radio & Test Equipment IF and RF Applications Single Supply: +8V to +12V Industry Standard SOT89 Package OLETE Functional Diagram General Description The HMC475ST89(E) is a InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifier covering DC to 4.5 GHz. Packaged in an industry standard SOT89, the amplifier can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +25 dBm output power. The HMC475ST89(E) offers 21.5 dB of gain and +35 dBm output IP3 at 850 MHz while requiring only 110 mA from a single positive supply. The Darlington topology results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components. S Electrical Specifications, Vs= 8.0 V, Rbias= 9.1 Ohm, TA = +25° C Gain B Gain Variation Over Temperature O Input Return Loss Parameter DC - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 4.0 - 4.5 GHz DC - 4.5 GHz DC - 1.0 GHz 1.0 - 2.0 GHz Min. Typ. 19.5 21.5 17.5 19.5 14.5 16.5 11.5 13.5...




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