HMC475ST89 / 475ST89E
v02.0710
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.5 GHz
AMPLIFIERS - DRIVER & GAIN BLOCK - S...
HMC475ST89 / 475ST89E
v02.0710
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.5 GHz
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
8
8 - 74
Typical Applications
Features
The HMC475ST89 / HMC475ST89E is an ideal RF/IF
P1dB Output Power: +22 dBm
gain block & LO or PA driver:
Gain: 21.5 dB
Cellular / PCS / 3G
Output IP3: +35 dBm
Fixed Wireless & WLAN
Cascadable 50 Ohm I/Os
CATV, Cable Modem & DBS Microwave Radio & Test Equipment IF and RF Applications
Single Supply: +8V to +12V Industry Standard SOT89 Package
OLETE Functional Diagram
General Description
The HMC475ST89(E) is a InGaP Heterojunction Bipolar
Transistor (HBT) Gain Block MMIC SMT amplifier covering DC to 4.5 GHz. Packaged in an industry standard SOT89, the amplifier can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +25 dBm output power. The HMC475ST89(E) offers 21.5 dB of gain and +35 dBm output IP3 at 850 MHz while requiring only 110 mA from a single positive supply. The Darlington topology results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components.
S Electrical Specifications, Vs= 8.0 V, Rbias= 9.1 Ohm, TA = +25° C
Gain
B Gain Variation Over Temperature O Input Return Loss
Parameter
DC - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 4.0 - 4.5 GHz DC - 4.5 GHz DC - 1.0 GHz 1.0 - 2.0 GHz
Min.
Typ.
19.5
21.5
17.5
19.5
14.5
16.5
11.5
13.5...