MMIC AMPLIFIER. HMC475ST89 Datasheet

HMC475ST89 AMPLIFIER. Datasheet pdf. Equivalent

Part HMC475ST89
Description InGaP HBT GAIN BLOCK MMIC AMPLIFIER
Feature HMC475ST89 / 475ST89E v02.0710 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.5 GHz AMPLIFIERS - DRI.
Manufacture Analog Devices
Datasheet
Download HMC475ST89 Datasheet



HMC475ST89
HMC475ST89 / 475ST89E
v02.0710
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.5 GHz
8
8 - 74
Typical Applications
Features
The HMC475ST89 / HMC475ST89E is an ideal RF/IF
P1dB Output Power: +22 dBm
gain block & LO or PA driver:
Gain: 21.5 dB
• Cellular / PCS / 3G
Output IP3: +35 dBm
• Fixed Wireless & WLAN
Cascadable 50 Ohm I/Os
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
• IF and RF Applications
Single Supply: +8V to +12V
Industry Standard SOT89 Package
OLETE Functional Diagram
General Description
The HMC475ST89(E) is a InGaP Heterojunction
Bipolar Transistor (HBT) Gain Block MMIC SMT
amplifier covering DC to 4.5 GHz. Packaged in an
industry standard SOT89, the amplifier can be used
as a cascadable 50 Ohm RF/IF gain stage as well as
a LO or PA driver with up to +25 dBm output power.
The HMC475ST89(E) offers 21.5 dB of gain and +35
dBm output IP3 at 850 MHz while requiring only 110
mA from a single positive supply. The Darlington
topology results in reduced sensitivity to normal
process variations and excellent gain stability over
temperature while requiring a minimal number of
external bias components.
S Electrical Specifications, Vs= 8.0 V, Rbias= 9.1 Ohm, TA = +25° C
Gain
B Gain Variation Over Temperature
O Input Return Loss
Parameter
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 4.5 GHz
DC - 4.5 GHz
DC - 1.0 GHz
1.0 - 2.0 GHz
Min.
Typ.
19.5
21.5
17.5
19.5
14.5
16.5
11.5
13.5
9
12
0.008
11
14
Max.
0.012
Units
dB
dB
dB
dB
dB
dB/ °C
dB
dB
2.0 - 4.5 GHz
14
dB
Output Return Loss
DC - 1.0 GHz
13
dB
1.0 - 4.5 GHz
10
dB
Reverse Isolation
DC - 4.5 GHz
25
dB
DC - 1.0 GHz
19.0
22.0
dBm
1.0 - 2.0 GHz
18.0
21.0
dBm
Output Power for 1 dB Compression (P1dB)
2.0 - 3.0 GHz
17.5
19.5
dBm
3.0 - 4.0 GHz
13.0
16.0
dBm
4.0 - 4.5 GHz
11.0
14.0
dBm
Output Third Order Intercept (IP3)
DC - 2.5 GHz
35
dBm
(Pout= 0 dBm per tone, 1 MHz spacing)
2.5 - 4.5 GHz
30
dBm
Noise Figure
DC - 3.0 GHz
3.5
dB
3.0 - 4.5 GHz
3.8
dB
Supply Current (Icq)
110
135
mA
Note: Data taken with broadband bias tee on device output.
IrrliniecgfseohpntrsFomsenoaosftiisirbtohingilprirtdyafrunpiirstcnaeairdsetsihesb,esuydmdthimebaedtyplmlbiiAcvyaanPyeAtaiorlhnroenaygsoluoonlDargt eofenDrvtohe:idmcev9ericwistt7esoissi8usefspo-beur2.neliadtSl5iseepcvur0eeseca-deinf,3iyoctno3aoprtrdia4boftenoee3srnartascsnoucyrb:ujipernHFaacfrtttaeiienttnoxgtatiecn:rtmhideg9aehnrn7teMgstls8eiaooibwf-cfl2Aieptrhn.5aooatHue0lwotong-wntas3oDeotvvi3ecreeveo7ri,c.th3eNCnesoor.orpFOPOoohnrroredanpTeetreii:rocc7enhO8,n,1nod-23l-eo02llgii9vnyAe-e4rWly7pa,a0hyta0,anw•PdR.wOOtoor.wdBaep.dohrlaxo,ictn9Cetl1iitn0hoee6re.d,caleNmtorwosms:rwwfAowonro.daadln,o,agMMloADAge.0cv02oic10me68s22,-49In10c.6,
Trademarks and registered trademarks arAe tphepplriocpearttyioofntheSir urespppecotivret:owPnehrso. ne: 978-250-3A3p4p3licaotrionaSpuppsp@orht:iPtthitoen.ec: o1-m800-ANALOG-D



HMC475ST89
v02.0710
HMC475ST89 / 475ST89E
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.5 GHz
Broadband Gain & Return Loss
Gain vs. Temperature
25
20
26
24
8
15
22
10
20
5
18
S21
0
S11
16
-5
S22
14
-10
-15
-20
-25
-30
-35
-40
E 0
1
2
3
4
5
6
FREQUENCY (GHz)
T Input Return Loss vs. Temperature
0
E -5
+25C
+85C
-10
-40C
L -15
-20
-25
O -30
-35
0
1
2
3
4
5
S FREQUENCY (GHz)
B Reverse Isolation vs. Temperature
0
+25C
O -10
+85C
12
10
8
6
4
2
0
0
+25C
+85C
-40C
1
2
3
4
FREQUENCY (GHz)
Output Return Loss vs. Temperature
0
-5
+25C
+85C
-40C
-10
-15
-20
-25
0
1
2
3
4
FREQUENCY (GHz)
Noise Figure vs. Temperature
10
8
+25C
+85C
-40C
5
5
-40C
6
-20
4
-30
2
-40
0
1
2
3
4
5
FREQUENCY (GHz)
0
0
1
2
3
4
5
FREQUENCY (GHz)
IrrliniecgfseohpntrsFomsenoaosftiisirbtohingilprirtdyafrunpiirstcnaeairdsetsihesb,esuydmdthimebaedtyplmlbiiAcvyaanPyeAtaiorlhnroenaygsoluoonlDargt eofenDrvtohe:idmcev9ericwistt7esoissi8usefspo-beur2.neliadtSl5iseepcvur0eeseca-deinf,3iyoctno3aoprtrdia4boftenoee3srnartascsnoucyrb:ujipernHFaacfrtttaeiienttnoxgtatiecn:rtmhideg9aehnrn7teMgstls8eiaooibwf-cfl2Aieptrhn.5aooatHue0lwotong-wntas3oDeotvvi3ecreeveo7ri,c.th3eNCnesoor.orpFOPOoohnrroredanpTeetreii:rocc7enhO8,n,1nod-23l-eo02llgii9vnyAe-e4rWly7pa,a0hyta0,anw•PdR.wOOtoor.wdBaep.dohrlaxo,ictn9Cetl1iitn0hoee6re.d,caleNmtorwosms:rwwfAowonro.daadln,o,agMMloADAge.0cv02oic10me68s22,-49In10c.6,
Trademarks and registered trademarks arAe tphepplriocpearttyioofntheSir urespppecotivret:owPnehrso. ne: 978-250-3A3p4p3licaotrionaSpuppsp@orht:iPtthitoen.ec: o1-m800-ANALOG-D
8 - 75





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)