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HMC478SC70E

Analog Devices

SiGe HBT GAIN BLOCK MMIC AMPLIFIER

HMC478SC70 / 478SC70E v02.0814 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz Amplifiers - Driver & Gain Block - SMT T...


Analog Devices

HMC478SC70E

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Description
HMC478SC70 / 478SC70E v02.0814 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz Amplifiers - Driver & Gain Block - SMT Typical Applications 8 The HMC478SC70(E) is an ideal for: Cellular / PCS / 3G WiBro / WiMAX / 4G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test Equipment Functional Diagram Features P1dB Output Power: +17 dBm Gain: 23 dB Output IP3: +31 dBm Cascadable 50 Ohm I/Os Single Supply: +5V to +8V Industry Standard SC70 Package General Description The HMC478SC70(E) is a SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifier covering DC to 4 GHz. This industry standard SC70 packaged amplifier can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +17 dBm output power. The HMC478SC70(E) offers 23 dB of gain with a +31 dBm output IP3 at 850 MHz while requiring only 62 mA from a single positive supply. The Darlington topology results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components. 8-1 Electrical Specifications, Vs= 5V, Rbias= 18 Ohm, TA = +25° C Parameter Min. Gain DC - 1.0 GHz 20 1.0 - 2.0 GHz 16 2.0 - 3.0 GHz 13 3.0 - 4.0 GHz 11 Gain Variation Over Temperature DC - 4 GHz Input Return Loss DC - 3.0 GHz 3.0 - 4.0 GHz Output Return Loss DC - 3.0 GHz 3.0 - 4.0 GHz Reverse Isolation DC - 4 GHz Output Power for 1 dB Compression (P1dB) 0.5 - 2.0 GHz...




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