phemt MMIC. HMC5445LS6 Datasheet

HMC5445LS6 MMIC. Datasheet pdf. Equivalent

Part HMC5445LS6
Description GaAs phemt MMIC
Feature AMPLIFIER - LINEAR & POWER - SMT HMC5445LS6 v01.0613 GaAs phemt MMIC 1 watt POWER AMPLIFIER, 24 .
Manufacture Analog Devices
Datasheet
Download HMC5445LS6 Datasheet



HMC5445LS6
HMC5445LS6
v01.0613
GaAs phemt MMIC 1 watt
POWER AMPLIFIER, 24 - 27 GHz
Typical Applications
Features
The HMC5445LS6 is ideal for:
Saturated Output Power: +31.5 dBm @ 23% PAE
• Point-to-Point Radios
High Output IP3: +40 dBm
• Point-to-Multi-Point Radios
High Gain: 26 dB
• VSAT
DC Supply: +6V @ 750 mA
• Military & Space
LETE Functional Diagram
No External Matching Required
16 Lead Ceramic 6 x 6 mm SMT Package: 36 mm2
General Description
The HMC5445LS6 is a three-stage GaAs pHEMT MMIC
1 Watt Power Amplifier which operates between
24 and 27 GHz. The HMC5445LS6 provides 26 dB of
gain, and +31 dBm of saturated output power and 18%
PAE from a +6V supply. The RF I/Os are DC blocked
and matched to 50 Ohms for ease of integration into
Multi-Function-Modules (MFMs). The HMC5445LS6
eliminates the need for wire bonding and allows the
use of surface mount manufacturing techniques.
BSO Electrical Specifications, TA = +25 °C, Vdd = Vdd1 = Vdd2 = +6V, Idd = 750 mA [1]
Parameter
Min.
Typ.
Max.
Units
Frequency Range
24 - 27
GHz
O Gain
23
26
dB
Gain Variation Over Temperature
0.03
dB/ °C
Input Return Loss
17
dB
Output Return Loss
Output Power for 1 dB Compression (P1dB)
17
27
30.5
dB
dBm
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)[2]
31.5
dBm
40
dBm
Total Supply Current (Idd)
[1] Adjust Vgg between -2 to 0V to achieve Idd = 750 mA typical.
[2] Measurement taken at +6V @ 750 mA, Pout / Tone = +19 dBm
750
mA
1
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Trademarks and registered trademarks arAe tphepplriocpearttyioofntheSir urespppecotivret:owPnehrso. ne: 978-250-3A3p4p3licaotrionaSpuppsp@orht:iPtthitoen.ec: o1-m800-ANALOG-D



HMC5445LS6
v01.0613
HMC5445LS6
GaAs phemt MMIC 1 watt
POWER AMPLIFIER, 24 - 27 GHz
Broadband Gain &
Return Loss vs. Frequency
Gain vs. Temperature
30
32
30
20
28
10
26
0
24
22
-10
-20
-30
-40
E 21
23
25
27
29
31
FREQUENCY (GHz)
S21
S11
S22
T Input Return Loss vs. Temperature
0
E -5
-10
L -15
-20
-25
O -30
23
24
25
26
FREQUENCY (GHz)
+ 25C
+ 85C
27
28
- 40C
BS P1dB vs. Temperature
33
O 31
20
18
16
14
12
23
24
25
26
FREQUENCY (GHz)
+ 25C
+ 85C
27
28
- 40C
Output Return Loss vs. Temperature
0
-5
-10
-15
-20
-25
-30
23
24
25
26
FREQUENCY (GHz)
+ 25C
+ 85C
27
28
- 40C
P1dB vs. Supply Voltage
33
31
29
29
27
27
25
25
23
23
24
25
26
FREQUENCY (GHz)
+ 25C
+ 85C
27
28
- 40C
23
23
24
25
26
FREQUENCY (GHz)
6.0V
5.5V
27
28
5.0V
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rpoFOornaretpTioreicnceh,,n2odleoElgilviyezrWayb,ayae,ntPdh.OtDo. rBpivolaxec9,e1C0oh6rd,eeNlrmos:rswAfoonoarddlo,,gMMADAe0v2i0c0e16s28,-29In410c.6,
POhrodnee:r7O81n-3-2li9n-e47a0t0wwOrwde.hr oitntliitnee.catowmww.analog.com
2
Trademarks and registered trademarks arAe tphepplriocpearttyioofntheSir urespppecotivret:owPnehrso. ne: 978-250-3A3p4p3licaotrionaSpuppsp@orht:iPtthitoen.ec: o1-m800-ANALOG-D





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