HMC559

LINEAR & POWER AMPLIFIERS - CHIP v03.0208 Typical Applications The HMC559 wideband PA is ideal for: Telecom Infrastructure 3 Microwave Radio & VSAT Military & Space Test Instrumentation Fiber Optics Functional Diagram HMC559 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 20 GHz Features P1dB Output Power: +28 dBm Gain: 14 dB Output IP3: +36 dBm Supply Voltage: +10V @ 400 mA 50 Ohm Matched Input/Output Die Size: 3.12 x 1.50 x 0.1 mm General Description The HMC559 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 20 GHz. The amplifier provides 14 dB of gain, +36 dBm output IP3 and +28 dBm of output power at 1 dB gain compression while requiring 400 mA from a +10V supply. Gain flatness is slightly positive from 4 to 20 GHz making the HMC559 ideal for EW, ECM and radar driver amplifier applications. The HMC559 amplifier I/O’s are internally matched to 50 Ohms facilitating integration into Multi-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.075mm (3 mil) ribbon bonds of minimal length 0.31mm (12 mils). 3 - 62 Electrical Specifications, TA = +25° C, Vdd= +10V, Vgg2= +4V, Idd= 400 mA* Parameter Frequency Range Gain Gain Flatness Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd) (Vdd= 10V, Vgg1= -0.8V Typ.) Min. Typ. Max. DC - 6 11 13 ±0.5 0.01 0.0...