pHEMT MMIC. HMC5805LS6 Datasheet

HMC5805LS6 MMIC. Datasheet pdf. Equivalent

Part HMC5805LS6
Description GaAs pHEMT MMIC
Feature HMC5805LS6 v02.1216 GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER DC - 40 GHz AMPLIFIERS - LINEEAR & PO.
Manufacture Analog Devices
Datasheet
Download HMC5805LS6 Datasheet



HMC5805LS6
HMC5805LS6
v02.1216
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER
DC - 40 GHz
Typical Applications
Features
The HMC5805LS6 is ideal for:
High P1dB Output Power: 22 dBm
• Test Instrumentation
High Psat Output Power: 24 dBm
• Microwave Radio & VSAT
High Gain: 13.5 dB
• Military & Space
High Output IP3: 33 dBm
• Telecom Infrastructure
• Fiber Optics
LETE Functional Diagram
Supply Voltage: +10 V @ 175 mA
16 Lead Ceramic 6x6 mm SMT Package: 36 mm2
General Description
The HMC5805LS6 is a GaAs pHEMT MMIC Distrib-
uted Power Amplifier which operates between DC
and 40 GHz. The amplifier provides 13 dB of gain,
33 dBm output IP3 and +22 dBm of output power at
1 dB gain compression while requiring 175 mA from
a +10 V supply. The HMC5805LS6 exhibits a slightly
positive gain slope from 8 to 32 GHz, making it ideal
for EW, ECM, Radar and test equipment applica-
tions. The HMC5805LS6 amplifier I/Os are internally
matched to 50 Ohms and the 6x6 mm SMT package is
well suited for automated assembly techniques.
BSO Electrical Specifications, TA = +25° C, Vdd = +10 V, Vgg2 = +3.5 V, Idd = 175 mA*
Parameter
Frequency Range
O Gain
Min. Typ. Max.
DC - 12
11
13
Min.
Typ. Max.
12 - 35
11.5
13.5
Min.
Typ. Max. Units
35 - 40
GHz
7
10
dB
Gain Flatness
±0.35
±0.5
±1.0
dB
Gain Variation Over Temperature
0.02
0.03
0.05
dB/ °C
Input Return Loss
18
15
12
dB
Output Return Loss
24
13
11
dB
Output Power for 1 dB Compression (P1dB)
20
22
19
21
16
19
dBm
Saturated Output Power (Psat)
24
23.5
21
dBm
Output Third Order Intercept (IP3)
33
31
27
dBm
Noise Figure
4.5
4
7
dB
Supply Current
(Idd) (Vdd= 10V, Vgg1= -0.8V Typ.)
175
175
175
mA
* Adjust Vgg1 between -2 to 0 V to achieve Idd = 175 mA typical.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc.,
1
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Trademarks and registered trademarks are the property of their respective owners.
Application Support: Phone: 1-800-ANALOG-D



HMC5805LS6
HMC5805LS6
v02.1216
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER
DC - 40 GHz
Gain & Return Loss
Gain vs. Temperature
20
18
10
16
0
14
-10
-20
-30
-40
E 0
5 10 15 20 25 30 35 40 45 50
FREQUENCY (GHz)
S21
S11
S22
T Input Return Loss vs. Temperature
0
E -10
L -20
-30
O -40
S 0
5
10 15 20 25 30 35 40
FREQUENCY (GHz)
+25C
+85C
-40C
B Noise Figure vs. Temperature
10
O 8
12
10
8
6
0
5
10 15 20 25 30 35 40
FREQUENCY (GHz)
+25C
+85C
-40C
Output Return Loss vs. Temperature
0
-10
-20
-30
-40
0 4 8 12 16 20 24 28 32 36 40
FREQUENCY (GHz)
+25C
+85C
-40C
P1dB vs. Temperature
27
25
23
6
21
4
19
2
17
0
0 4 8 12 16 20 24 28 32 36 40
FREQUENCY (GHz)
15
0
5
10 15 20 25 30 35 40
FREQUENCY (GHz)
+25C
+85C
-40C
+25C
+85C
-40C
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
2





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)