GaAs pHEMT MMIC
HMC5805LS6
v02.1216
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER DC - 40 GHz
AMPLIFIERS - LINEEAR & POWER - SMT
Typical A...
Description
HMC5805LS6
v02.1216
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER DC - 40 GHz
AMPLIFIERS - LINEEAR & POWER - SMT
Typical Applications
Features
The HMC5805LS6 is ideal for:
High P1dB Output Power: 22 dBm
Test Instrumentation
High Psat Output Power: 24 dBm
Microwave Radio & VSAT
High Gain: 13.5 dB
Military & Space
High Output IP3: 33 dBm
Telecom Infrastructure Fiber Optics
LETE Functional Diagram
Supply Voltage: +10 V @ 175 mA 16 Lead Ceramic 6x6 mm SMT Package: 36 mm2
General Description
The HMC5805LS6 is a GaAs pHEMT MMIC Distributed Power Amplifier which operates between DC and 40 GHz. The amplifier provides 13 dB of gain, 33 dBm output IP3 and +22 dBm of output power at 1 dB gain compression while requiring 175 mA from a +10 V supply. The HMC5805LS6 exhibits a slightly positive gain slope from 8 to 32 GHz, making it ideal for EW, ECM, Radar and test equipment applications. The HMC5805LS6 amplifier I/Os are internally matched to 50 Ohms and the 6x6 mm SMT package is well suited for automated assembly techniques.
BSO Electrical Specifications, TA = +25° C, Vdd = +10 V, Vgg2 = +3.5 V, Idd = 175 mA*
Parameter Frequency Range
O Gain
Min. Typ. Max.
DC - 12
11
13
Min.
Typ. Max.
12 - 35
11.5
13.5
Min.
Typ. Max. Units
35 - 40
GHz
7
10
dB
Gain Flatness
±0.35
±0.5
±1.0
dB
Gain Variation Over Temperature
0.02
0.03
0.05
dB/ °C
Input Return Loss
18
15
12
dB
Output Return Loss
24
13
11
dB
Output Power for 1 dB Compression (P1dB)
2...
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