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HMC580ST89

Analog Devices

InGaP HBT GAIN BLOCK MMIC AMPLIFIER

HMC580ST89 / 580ST89E v04.0710 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 1 GHz AMPLIFIERS - DRIVER & GAIN BLOCK - SMT...


Analog Devices

HMC580ST89

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Description
HMC580ST89 / 580ST89E v04.0710 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 1 GHz AMPLIFIERS - DRIVER & GAIN BLOCK - SMT 8 8 - 146 Typical Applications Features The HMC580ST89 / HMC580ST89E is ideal forr: P1dB Output Power: +22 dBm Cellular / PCS / 3G Gain: 22 dB Fixed Wireless & WLAN Output IP3: +37 dBm CATV, Cable Modem & DBS Cascadable 50 Ohm I/Os Microwave Radio & Test Equipment IF & RF Applications LETE Functional Diagram Single Supply: +5V Industry Standard SOT89 Package General Description The HMC580ST89 & HMC580ST89E are InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifiers covering DC to 1 GHz. Packaged in an industry standard SOT89, the amplifier can be used as a cascadable 50 Ohm RF or IF gain stage as well as a PA or LO driver with up to +26 dBm output power. The HMC580ST89(E) offers 22 dB of gain with a +37 dBm output IP3 at 250 MHz, and can operate directly from a +5V supply. The HMC580ST89(E) exhibits excellent gain and output power stability over temperature, while requiring a minimal number of external bias components. SO Electrical Specifications, Vs= 5V, Rbias= 1.8 Ohm, TA = +25° C Parameter Min. B Gain O Gain Variation Over Temperature DC - 0.25 GHz 19 0.25 - 0.50 GHz 18.5 0.50 - 1.00 GHz 15 DC - 1.0 GHz DC - 0.25 GHz Typ. 22 21 17 0.005 35 Max. Units dB dB dB dB/ °C dB Input Return Loss 0.25 - 0.50 GHz 28 dB 0.50 - 1.00 GHz 19 dB Output Return Loss DC - 0.50 GHz 12 dB 0.50 - 1.00 GHz...




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