HMC580ST89 / 580ST89E
v04.0710
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 1 GHz
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT...
HMC580ST89 / 580ST89E
v04.0710
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 1 GHz
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
8
8 - 146
Typical Applications
Features
The HMC580ST89 / HMC580ST89E is ideal forr:
P1dB Output Power: +22 dBm
Cellular / PCS / 3G
Gain: 22 dB
Fixed Wireless & WLAN
Output IP3: +37 dBm
CATV, Cable Modem & DBS
Cascadable 50 Ohm I/Os
Microwave Radio & Test Equipment IF & RF Applications
LETE Functional Diagram
Single Supply: +5V Industry Standard SOT89 Package
General Description
The HMC580ST89 & HMC580ST89E are InGaP Heterojunction Bipolar
Transistor (HBT) Gain Block MMIC SMT amplifiers covering DC to 1 GHz. Packaged in an industry standard SOT89, the amplifier can be used as a cascadable 50 Ohm RF or IF gain stage as well as a PA or LO driver with up to +26 dBm output power. The HMC580ST89(E) offers 22 dB of gain with a +37 dBm output IP3 at 250 MHz, and can operate directly from a +5V supply. The HMC580ST89(E) exhibits excellent gain and output power stability over temperature, while requiring a minimal number of external bias components.
SO Electrical Specifications, Vs= 5V, Rbias= 1.8 Ohm, TA = +25° C
Parameter
Min.
B Gain O Gain Variation Over Temperature
DC - 0.25 GHz
19
0.25 - 0.50 GHz
18.5
0.50 - 1.00 GHz
15
DC - 1.0 GHz
DC - 0.25 GHz
Typ.
22 21 17 0.005 35
Max.
Units
dB dB dB dB/ °C dB
Input Return Loss
0.25 - 0.50 GHz
28
dB
0.50 - 1.00 GHz
19
dB
Output Return Loss
DC - 0.50 GHz
12
dB
0.50 - 1.00 GHz...