HMC592

LINEAR & POWER AMPLIFIERS - CHIP v02.0109 HMC592 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 10 - 13 GHz Typical Applications Features The HMC592 is ideal for use as a power amplifier for: Saturated Output Power: Point-to-Point Radios +31 dBm @ 21% PAE 3 Point-to-Multi-Point Radios Test Equipment & Sensors Output IP3: +38 dBm Gain: 19 dB Military End-Use DC Supply: +7V @ 750 mA Space 50 Ohm Matched Input/Output Die Size: 2.47 x 1.17 x 0.1 mm Functional Diagram General Description The HMC592 is a high dynamic range GaAs PHEMT MMIC 1 Watt Power Amplifier which operates from 10 to 13 GHz. This amplifier die provides 19 dB of gain and +31 dBm of saturated power, at 21% PAE from a +7V supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into MultiChip-Modules (MCMs). All data is taken with the chip in a 50 ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of length 0.31mm (12 mils). For applications which require optimum OIP3, Idd should be set for 400 mA, to yield +38 dBm OIP3. For applications which require optimum output P1dB, Idd should be set for 750 mA, to yield +31 dBm Output P1dB. Electrical Specifications, TA = +25° C, Vdd = +7V, Idd = 750 mA* Parameter Min. Frequency Range Gain 16 Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) 28 Saturated Output Power (Psat) Output Third Order Intercept (IP3)[2] Supply Current (Idd) [1] Adju...