HMC606

HMC606 v04.0118 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz LOW NOISE AMPLIFIERS - CHIP Typical Applications The HMC606 is ideal for: Radar, EW & ECM Microwave Radio Test Instrumentation Military & Space Fiber Optic Systems Features Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz P1dB Output Power: +15 dBm Gain: 14 dB Output IP3: +27 dBm Supply Voltage: +5V @ 64 mA 50 Ohm Matched Input/Output Die Size: 2.80 x 1.73 x 0.1 mm Functional Diagram General Description The HMC606 is a GaAs InGaP HBT MMIC Distributed Amplifier die which operates between 2 and 18 GHz. With an input signal of 12 GHz, the amplifier provides ultra low phase noise performance of -160 dBc/Hz at 10 kHz offset, representing a significant improvement over FET-based distributed amplifiers. The HMC606 provides 14 dB of small signal gain, +27 dBm output IP3 and +15 dBm of output power at 1 dB gain compression while requiring 64 mA from a +5V supply. The HMC606 amplifier I/Os are internally matched to 50 Ohms facilitating easy integration into Multi-ChipModules (MCMs). All data is taken with the chip in a 50 Ohm test fixture connected via 0.025 mm (1mil) diameter wire bonds of minimal length 0.31 mm (12 mils). Electrical Specifications, TA = +25° C, Vcc1= Vcc2= 5V Parameter Min. Typ. Max. Min. Frequency Range 2 - 12 Gain 11 14.0 10 Gain Flatness ±1.0 Gain Variation Over Temperature 0.021 Noise Figure 4.5 Input Return Loss 20 Output Return Loss 15...