HMC606LC5

Data Sheet GaAs, InGaP, HBT, MMIC, Ultralow Phase Noise, Distributed Amplifier, 2 GHz to 18 GHz HMC606LC5 FEATURES Ultralow phase noise: −160 dBc/Hz typical at 10 kHz Output power for 1 dB compression (P1dB): 15 dBm typical at 2 GHz to 12 GHz frequency range Gain: 13.5 dB typical at 2 GHz to 12 GHz frequency range Output third-order intercept (IP3): 27 dBm typical at 2 GHz to 12 GHz frequency range Supply voltage: 5.0 V at 64 mA typical 50 Ω matched input/output 32-terminal, ceramic, leadless chip carrier (LCC) APPLICATIONS Radars, electronic warfare (EW), and electronic counter measures (ECMs) Microwave radios Test instrumentation Military and space Fiber optic systems GENERAL DESCRIPTION The HMC606LC5 is a gallium arsenide (GaAs), indium gallium phosphide (InGaP), heterojunction bipolar transistor (HBT), monolithic microwave integrated circuit (MMIC) distributed amplifier housed in a 32-terminal, ceramic, leadless chip carrier (LCC) package that operates from 2 GHz to 18 GHz. With an input signal of 12 GHz, the amplifier provides ultralow phase noise performance of −160 dBc/Hz at a 10 kHz offset, representing a significant improvement over field effect transistor (FET)based distributed amplifiers. FUNCTIONAL BLOCK DIAGRAM 32 NC 31 NC 30 NC 29 NC 28 NC 27 NC 26 NC 25 NC NC 1 VCC1 2 NC 3 GND 4 RFIN 5 GND 6 NC 7 NC 8 HMC606LC5 24 NC 23 NC 22 GND 21 RFOUT 20 GND 19 NC 18 NC 17 NC Figure 1. PACKAGE BASE GND NC 9 NC 10 NC 11 NC 12 NC 13 NC 14 NC 15 VCC2 16 14968-001 Th...