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HMC619LP5E

Analog Devices

GaAs PHEMT MMIC

LINEAR & POWER AMPLIFIERS - SMT v07.0908 Typical Applications The HMC619LP5(E) wideband PA is ideal for: • Telecom I...


Analog Devices

HMC619LP5E

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Description
LINEAR & POWER AMPLIFIERS - SMT v07.0908 Typical Applications The HMC619LP5(E) wideband PA is ideal for: Telecom Infrastructure 6 Microwave Radio & VSAT Military & Space Test Instrumentation Fiber Optics Functional Diagram HMC619LP5 / 619LP5E GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz Features P1dB Output Power: +27 dBm Gain: 11 dB Output IP3: +37 dBm Supply Voltage: +12V @ 300 mA 50 Ohm Matched Input/Output 32 Lead 5x5mm Lead SMT Package: 25mm2 General Description The HMC619LP5(E) is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 10 GHz. The amplifier provides 11 dB of gain, +37 dBm output IP3 and +27 dBm of output power at 1 dB gain compression while requiring 300 mA from a +12V supply. Gain flatness is excellent at ±0.5 dB from DC - 10 GHz making the HMC619LP5(E) ideal for EW, ECM, Radar and test equipment applications. The HMC619LP5(E) amplifier I/Os are internally matched to 50 ohms. 6 - 324 Electrical Specifications, TA = +25° C, Vdd= +12V, Vgg2= +5V, Idd= 300 mA* Parameter Min. Typ. Max. Frequency Range DC - 2.0 Gain 10 12 Gain Flatness ±0.5 Gain Variation Over Temperature 0.016 Input Return Loss 11 Output Return Loss 16 Output Power for 1 dB Compression (P1dB) 28 Saturated Output Power (Psat) 29 Output Third Order Intercept (IP3) 41 Noise Figure 5 Supply Current 300 (Idd) (Vdd= +12V, Vgg1= -0.8V Typ.) * Adjust Vgg1 between -2 to 0V to achieve Idd= 300 mA typical. Min. Typ. Max. 2.0 -...




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