HMC632LP5

HMC632LP5 / 632LP5E v03.0811 MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 14.25 - 15.65 GHz Typical Applications The HMC632LP5(E) is ideal for: Point to Point/Multipoint Radio Test Equipment & Industrial Controls SATCOM Military End-Use Functional Diagram 8 Features Dual Output: Fo = 14.25 - 15.65 GHz Fo/2 = 7.125 - 7.825 GHz Pout: +9 dBm Phase Noise: -107 dBc/Hz @100 kHz Typ. No External Resonator Needed 32 Lead 5x5mm SMT Package: 25mm² General Description The HMC632LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC632LP5(E) integrates resonators, negative resistance devices, varactor diodes and features halffrequency and divide-by-4 outputs. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +9 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components. VCOS with Fo/2 OUTPUT - SMT 8-1 Electrical Specifications, TA = +25° C, Vcc (Dig), Vcc (Amp), Vcc (RF) = +5V Parameter Frequency Range Power Output SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RFOUT Tune Voltage Supply Current Tune Port Leakage Current (Vtune= 13V) Output Return Loss Harmonics/Subharmonics Pulling (into a 2.0:1 VSWR) Pushing @ Vtune= 5V Frequency Drift Rate Fo Fo/...