PHEMT MMIC. HMC667LP2 Datasheet

HMC667LP2 MMIC. Datasheet pdf. Equivalent

Part HMC667LP2
Description GaAs PHEMT MMIC
Feature HMC667LP2 / 667LP2E v02.1110 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.3 - 2.7 GHz 7 Typical Applica.
Manufacture Analog Devices
Datasheet
Download HMC667LP2 Datasheet



HMC667LP2
HMC667LP2 / 667LP2E
v02.1110
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.7 GHz
7
Typical Applications
Features
The HMC667LP2(E) is ideal for:
Low Noise Figure: 0.75 dB
• WiMAX, WiBro & Fixed Wireless
High Gain: 19 dB
• SDARS & WLAN Receivers
High Output IP3: +29.5 dBm
• Infrastructure & Repeaters
Single Supply: +3V to +5V
• Access Points
• Telematics & DMB
LETE Functional Diagram
6 Lead 2x2mm DFN Package: 4 mm2
General Description
The HMC667LP2(E) is a GaAs PHEMT MMIC Low
Noise Amplifier that is ideal for WiMAX, WLAN and
fixed wireless receivers operating between 2300
and 2700 MHz. This self-biased LNA has been
optimized to provide 0.75 dB noise figure, 19 dB
gain and +29.5 dBm output IP3 from a single supply
of +5V. Input and output return losses are excellent
and the LNA requires minimal external matching and
bias decoupling components. The HMC667LP2(E)
can also operate from a +3V supply for lower power
applications.
SO Electrical Specifications, TA = +25° C
B Parameter
O Frequency Range
Vdd = +3 Vdc
Min.
Typ.
Max.
2300 - 2700
Vdd = +5 Vdc
Min.
Typ.
Max.
2300 - 2700
Units
MHz
Gain
14
17.5
16
19
dB
Gain Variation Over Temperature
0.01
0.01
dB/ °C
Noise Figure
0.9
1.2
0.75
1.1
dB
Input Return Loss
10
12
dB
Output Return Loss
15
14
dB
Output Power for 1 dB
Compression (P1dB)
9.5
11.5
13.5
16.5
dBm
Saturated Output Power (Psat)
12.5
17
dBm
Output Third Order Intercept (IP3)
22
29.5
dBm
Supply Current (Idd)
24
32
59
75
mA
7-1
IrrliniecgfseohFpntrsomsoenoasrftiisibtohpingilrirrtdyafiuncpirstnaeeairdsts,ihesbesduydmtehimebaldtypivmlbiAcPeyaanyAhtariorlynooenagslnauoolDrgetneofD:rdvtoheim9cevteri7cwoistes8issiuspe-fso2lbeura.ne5idtSlcis0eepevure-esca3deoinf,iy3ctnroadop4triaboe3ftenoersrnastascn:oucyrbuHFjipernaaacfirtttteiexnttnoig:attecner9mhdiga7ehMnrnte8gstlseii-aoco2bwffrlAie5ptohn.a0oawtHuelo-tonag3wntsvoDe3otveiecr7eveori3C,.ctheNnesooor. rpOFOPoorhrndraoenetpTierroei:ccnO7eh8,,nn12od--30lleoi2lngiA9veye-l4rWpay7h,at0yaa0w,n•PRdw.OOotwor.ad.Bdephorl,iaxtocCtn9ietl1hein0oe.e6rcld,maoeNtmrswosf:rwowArwodno.aa,dlno,MagMloAADge.00cv21oic0m8e62s24,-9In10c.6,
Trademarks and registered trademarks aArepthpelpircopaetrityoonf thSeiur rpesppeoctrivte: oPwhneorsn. e: 978-250-33A4p3plicoartioanpSpusp@pohrti:tPtihteo.nceo: 1m-800-ANALOG-D



HMC667LP2
HMC667LP2 / 667LP2E
v02.1110
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.7 GHz
7
Broadband Gain & Return Loss
Gain vs. Temperature
25
24
20
Vdd=5V
S21
22
15
10
20
5
0
S11
-5
-10
-15
Vdd=5V
S22
-20
Vdd=3V
-25
E 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
FREQUENCY (GHz)
T Input Return Loss vs. Temperature [1]
0
E -5
+25C
+85C
-40C
L -10
-15
O -20
2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3
FREQUENCY (GHz)
BS Reverse Isolation vs.Temperature [1]
-20
O -25
18
16
Vdd=3V
14
+25C
+85C
-40C
12
2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3
FREQUENCY (GHz)
Output Return Loss vs. Temperature [1]
0
-5
+25C
+85C
-40C
-10
-15
-20
2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3
FREQUENCY (GHz)
P1dB vs. Temperature
20
18
16
Vdd=5V
-30
-35
-40
+25C
+85C
-40C
14
Vdd=3V
12
10
-45
-50
2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3
FREQUENCY (GHz)
8
+25C
+85C
-40C
6
2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3
FREQUENCY (GHz)
[1] Vdd = 5V
IrrliniecgfseohFpntrsomsoenoasrftiisibtohpingilrirrtdyafiuncpirstnaeeairdsts,ihesbesduydmtehimebaldtypivmlbiAcPeyaanyAhtariorlynooenagslnauoolDrgetneofD:rdvtoheim9cevteri7cwoistes8issiuspe-fso2lbeura.ne5idtSlcis0eepevure-esca3deoinf,iy3ctnroadop4triaboe3ftenoersrnastascn:oucyrbuHFjipernaaacfirtttteiexnttnoig:attecner9mhdiga7ehMnrnte8gstlseii-aoco2bwffrlAie5ptohn.a0oawtHuelo-tonag3wntsvoDe3otveiecr7eveori3C,.ctheNnesooor. rpOFOPoorhrndraoenetpTierroei:ccnO7eh8,,nn12od--30lleoi2lngiA9veye-l4rWpay7h,at0yaa0w,n•PRdw.OOotwor.ad.Bdephorl,iaxtocCtn9ietl1hein0oe.e6rcld,maoeNtmrswosf:rwowArwodno.aa,dlno,MagMloAADge.00cv21oic0m8e62s24,-9In10c.6,
Trademarks and registered trademarks aArepthpelpircopaetrityoonf thSeiur rpesppeoctrivte: oPwhneorsn. e: 978-250-33A4p3plicoartioanpSpusp@pohrti:tPtihteo.nceo: 1m-800-ANALOG-D
7-2





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)