HMC669LP3E

Amplifiers - Low Noise - SMT 7 7-1 HMC669LP3 / 669LP3E v04.0709 GaAs PHEMT MMIC LNA w/ FAILSAFE BYPASS MODE, 1700 - 2200 MHz Typical Applications Features The HMC669LP3(E) is ideal for: Noise Figure: 1.4 dB Cellular/3G and LTE/WiMAX/4G Output IP3: +29 dBm BTS & Infrastructure Gain: 17 dB Repeaters and Femtocells Failsafe Operation: Tower Mounted Amplifiers Test & Measurement Equipment LETE Functional Diagram Bypass is enabled when LNA is unpowered Single Supply: +3V or +5V 16 Lead 3x3mm QFN Package: 9 mm2 General Description The HMC669LP3(E) is a versatile, high dynamic range GaAs MMIC Low Noise Amplifier that integrates a low loss LNA bypass mode on the IC. The amplifier is ideal for receivers and LNA modules operating between 1.7 and 2.2 GHz and provides 1.4 dB noise figure, 17 dB of gain and +29 dBm IP3 from a single supply of +5V @ 86mA. Input and output return losses are excellent and no external matching components are required. A single control line is used to switch between LNA mode and a low loss bypass mode. Failsafe topology also enables the LNA bidirectional bypass path when no DC power is available. SO Electrical Specifications, TA = +25° C, Rbias = 15 Ohm Parameter LNA Mode Vdd = +3V Vdd = +5V Bypass Mode Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. B Frequency Range 1.7 - 2.2 1.7 - 2.2 1.7 - 2.2 Gain 12 15 14 17 -3 -2.1 Gain Variation Over Temperature 0.015 0.014 0.0008 O Noise Figure 1.4 1.65 1.4 1.65 Failsa...