HMC715LP3

Amplifiers - Low Noise - SMT 7 7-1 HMC715LP3 / 715LP3E v01.0808 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz Typical Applications Features The HMC715LP3(E) is ideal for: Noise Figure: 0.9 dB Cellular/3G and LTE/WiMAX/4G Gain: 19 dB BTS & Infrastructure Output IP3: +33 dBm Repeaters and Femtocells Single Supply: +3V to +5V Public Safety Radio Access Points LETE Functional Diagram 16 Lead 3x3mm QFN Package: 9 mm2 General Description The HMC715LP3(E) is a GaAs PHEMT MMIC Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 2.1 and 2.9 GHz. The amplifier has been optimized to provide 0.9 dB noise figure, 19 dB gain and +33 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC715LP3(E) can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. SO Electrical Specifications B TA = +25° C, Rbias = 2k Ohms for Vdd = +5V, Rbias = 47k Ohms for Vdd = +3V [1] Parameter Vdd = +3V Vdd = +5V Units Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. O Frequency Range 2.1 - 2.9 2.3 - 2.7 2.1 - 2.9 2.3 - 2.7 MHz Gain 14.5 18 15 18 15.5 19 16.5 19 dB Gain Variation Over Temperature 0.01 0.01 0.01 0.01 dB/ °C Noise Figure 0.9 1.2 ...