PHEMT MMIC. HMC717LP3E Datasheet

HMC717LP3E MMIC. Datasheet pdf. Equivalent

Part HMC717LP3E
Description GAAS PHEMT MMIC
Feature HMC717LP3E v06.1113 GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz AMPLIFIER - LOW NOISE - SM.
Manufacture Analog Devices
Datasheet
Download HMC717LP3E Datasheet



HMC717LP3E
HMC717LP3E
v06.1113
GAAS PHEMT MMIC LOW NOISE
AMPLIFIER, 4.8 - 6.0 GHz
Typical Applications
Features
The HMC717LP3E is ideal for:
Noise Figure: 1.1 dB
• Fixed Wireless and LTE/WiMAX/4G
Gain: 16.5 dB
• BTS & Infrastructure
• Repeaters and Femtocells
• Public Safety Radio
• Access Points
OLETE Functional Diagram
Output IP3: +31.5 dBm
Single Supply: +3V to +5V
16 Lead 3x3mm QFN Package: 9 mm2
General Description
The HMC717LP3E is a GaAs PHEMT MMIC
Low Noise Ampli er that is ideal for xed wireless
and LTE/WiMAX/4G basestation front-end receivers
operating between 4.8 and 6.0 GHz. The ampli er
has been optimized to provide 1.1 dB noise gure,
16.5 dB gain and +31.5 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent and the LNA requires minimal external
matching and bias decoupling components. The
HMC717LP3E can be biased with +3V to +5V and
features an externally adjustable supply current
which allows the designer to tailor the linearity
performance of the LNA for each application.
S Electrical Speci cations
B TA = +25° C, Rbias = 2k Ohms for Vdd = 5V, Rbias = 20k Ohms for Vdd = 3V [1] [2]
Parameter
Vdd = +3V
Min.
Typ.
Max.
Vdd = +5V
Units
Min.
Typ.
Max.
OFrequency Range
4.8 - 6.0
4.8 - 6.0
GHz
Gain
12
14.3
21
13.5
16.5
21
dB
Gain Variation Over Temperature
0.01
0.01
dB/ °C
Noise Figure
1.25
1.5
1.1
1.4
dB
Input Return Loss
13
13
dB
Output Return Loss
13
18
dB
Output Power for 1 dB Compression (P1dB)
12
14
15
18.5
dBm
Saturated Output Power (Psat)
15
19.5
dBm
Output Third Order Intercept (IP3)
25.5
27 [3]
31.5
dBm
Total Supply Current (Idd)
31
40
73
100
mA
[1] Rbias resistor sets current, see application circuit herein
[2] Vdd = Vdd1 = Vdd2
[3] Guaranteed by Design at 5GHz.
1
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Trademarks and registered trademarks are the property of their respective owners.
Application Support: Phone: 1-800-ANALOG-D



HMC717LP3E
HMC717LP3E
v06.1113
GAAS PHEMT MMIC LOW NOISE
AMPLIFIER, 4.8 - 6.0 GHz
Broadband Gain & Return Loss [1][2]
Gain vs. Temperature [1]
25
25
20
15
S21
21
10
5
S11
0
-5
-10
-15
-20
S22
E -25
-30
1 2 3 4 5 6 7 8 9 10
FREQUENCY (GHz)
Vdd=5V
Vdd=3V
T Gain vs. Temperature [2]
E 25
21
L 17
13
9
O 5
4.5
4.9
5.3
5.7
FREQUENCY (GHz)
+25C
+85C
6.1
6.5
-40C
S Output Return Loss vs. Temperature [1]
B 0
-5
O-10
17
13
9
5
4.5
4.9
5.3
5.7
FREQUENCY (GHz)
+25C
+85C
6.1
6.5
-40C
Input Return Loss vs. Temperature [1]
0
-5
-10
-15
-20
4.5
4.9
5.3
5.7
6.1
6.5
FREQUENCY (GHz)
+25C
+85C
-40C
Reverse Isolation vs. Temperature [1]
-20
-25
-30
-35
-15
-40
-20
-45
-25
4.5
4.9
5.3
5.7
6.1
6.5
FREQUENCY (GHz)
+25C
+85C
-40C
-50
4.5
4.9
5.3
5.7
6.1
6.5
FREQUENCY (GHz)
+25C
+85C
-40C
[1] Vdd = 5V, Rbias = 2kΩ [2] Vdd = 3V, Rbias = 20kΩ
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2
Trademarks and registered trademarks are the property of their respective owners.
Application Support: Phone: 1-800-ANALOG-D





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