HMC719LP4

Amplifiers - Low Noise - SMT 7 7-1 HMC719LP4 / 719LP4E v04.0610 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 1.3 - 2.9 GHz Typical Applications Features The HMC719LP4(E) is ideal for: Noise Figure: 1.0 dB Cellular/3G and LTE/WiMAX/4G Gain: 34 dB BTS & Infrastructure Output IP3: +39 dBm Repeaters and Femtocells Single Supply: +3V to +5V Access Points Test Equipment & Military OLETE Functional Diagram 50 Ohm Matched Input/Output 24 Lead 4x4 mm SMT Package: 16 mm2 General Description The HMC719LP4(E) is a GaAs PHEMT MMIC Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 1.3 and 2.9 GHz. The amplifier has been optimized to provide 1.0 dB noise figure, 34 dB gain and +39 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC719LP4(E) shares the same package and pinout with the HMC718LP3(E) 600 - 1400 MHz LNA. The HMC719LP4(E) can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. S Electrical Specifications, TA = +25°C, Rbias = 1.5k Ohms* B Parameter O Frequency Range Vdd = +3V Min. Typ. Max. Min. Typ. Max. 1.3 - 2.2 2.2 - 2.9 Vdd = +5V Min. Typ. Max. Min. Typ. Max. 1.3 - 2.2 2.2 - 2.9 Units GHz Gain 27 32 22 26.5 29 35 24 28 dB ...