v03.0609
Typical Applications
The HMC734LP5(E) is ideal for: • Point-to-Point/Multi-Point Radio • Test Equipment & Indus...
v03.0609
Typical Applications
The HMC734LP5(E) is ideal for: Point-to-Point/Multi-Point Radio Test Equipment & Industrial Controls SATCOM Military End-Use
Functional Diagram
8
HMC734LP5 / 734LP5E
MMIC VCO w/ DIVIDE-BY-4 8.6 - 10.2 GHz
Features
Dual Output: Fo = 8.6 - 10.2 GHz Fo/4 = 2.15 - 2.55 GHz
Pout: +18 dBm Phase Noise: -100 dBc/Hz @ 100 kHz Typ. No External Resonator Needed 32 Lead 5x5mm SMT Package: 25mm2
General Description
The HMC734LP5(E) is a GaAs InGaP Heterojunction Bipolar
Transistor (HBT) MMIC VCO. The HMC734LP5(E) integrates a resonator, negative resistance device, varactor diode and features a divide-by-4 frequency output. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +18 dBm typical from a +5V supply voltage. The prescaler function can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.
VCOS - SMT
Electrical Specifications, TA = +25° C, Vcc (Dig), Vcc (Amp), Vcc (RF) = +5V
Frequency Range
Parameter
Power Output
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RFOUT Tune Voltage Supply Current Tune Port Leakage Current (Vtune= 13V) Output Return Loss (RFOUT)
Harmonics/Subharmonics
Pulling (into a 2.0:1 VSWR) Pushing @ Vtune= 5V Frequency Drift Rate
Min.
Fo Fo/4
RFOUT 15
RFOUT/4
-8
Vtune
1
Icc(Dig) + Icc(Am...