v03.0609
Typical Applications
The HMC735LP5(E) is ideal for: • Point-to-Point/Multi-Point Radio • Test Equipment & Indus...
v03.0609
Typical Applications
The HMC735LP5(E) is ideal for: Point-to-Point/Multi-Point Radio Test Equipment & Industrial Controls SATCOM Military End-Use
Functional Diagram
8
HMC735LP5 / 735LP5E
MMIC VCO w/ DIVIDE-BY-4 10.5 - 12.2 GHz
Features
Dual Output: Fo = 10.5 - 12.2 GHz Fo/4 = 2.625 - 3.05 GHz
Pout: +17 dBm Phase Noise: -100 dBc/Hz @ 100 kHz Typ. No External Resonator Needed 32 Lead 5x5mm SMT Package: 25mm2
General Description
The HMC735LP5(E) is a GaAs InGaP Heterojunction Bipolar
Transistor (HBT) MMIC VCO. The HMC735LP5(E) integrates resonators, negative resistance devices, varactor diodes and features a divide-by-4 frequency output. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +17 dBm typical from a +5V supply voltage. The prescaler function can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.
VCOS - SMT
8-1
Electrical Specifications, TA = +25° C, Vcc (Dig), Vcc (Amp), Vcc (RF) = +5V
Parameter Frequency Range
Power Output SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RFOUT Tune Voltage Supply Current Tune Port Leakage Current (Vtune= 13V) Output Return Loss Harmonics/Subharmonics
Pulling (into a 2.0:1 VSWR) Pushing @ Vtune= 5V Frequency Drift Rate
Min.
Typ.
Max.
Fo Fo/4
10.5 - 12.2 2.625 - 3.05
RFOUT
14
21
...