HMC735LP5

v03.0609 Typical Applications The HMC735LP5(E) is ideal for: Point-to-Point/Multi-Point Radio Test Equipment & Industrial Controls SATCOM Military End-Use Functional Diagram 8 HMC735LP5 / 735LP5E MMIC VCO w/ DIVIDE-BY-4 10.5 - 12.2 GHz Features Dual Output: Fo = 10.5 - 12.2 GHz Fo/4 = 2.625 - 3.05 GHz Pout: +17 dBm Phase Noise: -100 dBc/Hz @ 100 kHz Typ. No External Resonator Needed 32 Lead 5x5mm SMT Package: 25mm2 General Description The HMC735LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC735LP5(E) integrates resonators, negative resistance devices, varactor diodes and features a divide-by-4 frequency output. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +17 dBm typical from a +5V supply voltage. The prescaler function can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components. VCOS - SMT 8-1 Electrical Specifications, TA = +25° C, Vcc (Dig), Vcc (Amp), Vcc (RF) = +5V Parameter Frequency Range Power Output SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RFOUT Tune Voltage Supply Current Tune Port Leakage Current (Vtune= 13V) Output Return Loss Harmonics/Subharmonics Pulling (into a 2.0:1 VSWR) Pushing @ Vtune= 5V Frequency Drift Rate Min. Typ. Max. Fo Fo/4 10.5 - 12.2 2.625 - 3.05 RFOUT 14 21 ...