HMC736LP4 / 736LP4E
v01.0209
MMIC VCO w/ HALF FREQUENCY OUTPUT 14.5 - 15.0 GHz
Typical Applications
The HMC736LP4(E) is...
HMC736LP4 / 736LP4E
v01.0209
MMIC VCO w/ HALF FREQUENCY OUTPUT 14.5 - 15.0 GHz
Typical Applications
The HMC736LP4(E) is ideal for: Point to Point/Multipoint Radio Test Equipment & Industrial Controls SATCOM Military End-Use
Functional Diagram
8
Features
Dual Output: Fo = 14.5 - 15.0 GHz Fo/2 = 7.25 - 7.5 GHz
Pout: +9 dBm
Phase Noise: -105 dBc/Hz @ 100 kHz
No External Resonator Needed 24 Lead 4x4mm SMT Package: 16mm2
General Description
The HMC736LP4(E) is a GaAs InGaP Heterojunction Bipolar
Transistor (HBT) MMIC VCO. The HMC736LP4(E) integrates a resonator, negative resistance device, varactor diode and feature half frequency output. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +9 dBm typical from a +4.2V supply voltage. The voltage controlled oscillator is packaged in a leadless QFN 4x4 mm surface mount package, and requires no external matching components.
VCOS with Fo/2 OUTPUT - SMT
8-1
Electrical Specifications, TA = +25° C, Vcc = +4.2V
Parameter
Frequency Range
Power Output
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RFOUT Tune Voltage Supply Current Tune Port Leakage Current (Vtune= 13V) Output Return Loss Harmonics/Subharmonics
Pulling (into a 2.0:1 VSWR) Pushing @ Vtune= 5V Frequency Drift Rate
Min.
Fo Fo/2
RFOUT
6
RFOUT/2
-8
Vtune
1
120
1/2 3/2
Typ. 14.5 - 15.0 7.25 - 7.5
9 -3
-105
150
2.5 -45 -42 12 24 1.2
Max.
13 2
13 180 10
Units GHz G...