HMC739LP4 / 739LP4E
v03.0309
MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-16, 23.8 - 26.8 GHz
Typical Applications
The...
HMC739LP4 / 739LP4E
v03.0309
MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-16, 23.8 - 26.8 GHz
Typical Applications
The HMC739LP4(E) is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios / LMDS VSAT
Features
Pout: +8 dBm Phase Noise: -93 dBc/Hz @ 100 kHz Typ. No External Resonator Needed 24 Lead 4x4mm SMT Package: 16mm²
Functional Diagram
8
General Description
The HMC739LP4(E) is a GaAs InGaP Heterojunction Bipolar
Transistor (HBT) MMIC VCO. The HMC739LP4(E) integrates a resonator, negative resistance device, varactor diode and divide-by-16 prescaler. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +8 dBm typical from a 5V supply voltage. The voltage controlled oscillator is packaged in a low cost leadless QFN 4x4 mm surface mount package
VCOS with Fo/2 OUTPUT - SMT
Electrical Specifications, TA = +25° C, Vcc(RF), Vcc(DIG) = +5V
Frequency Range Power Output
Parameter
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output Tune Voltage Supply Current Tune Port Leakage Current (Vtune= 13V) Output Return Loss Harmonics/Subharmonics
Pulling (into a 2.0:1 VSWR) Pushing @ Vtune= 5V Frequency Drift Rate
Min.
Fo Fo/2
RF OUT
3
RF OUT/2
-3
RF OUT/16
-7
Vtune
1
Icc (RF), Icc (DIG)
160
Typ. 23.8 - 26.8
-93 200
3
1/2
-20
3/2
-30
30
-65
4
Max.
14 5 -1
13 220 10
Units
GHz
dBm dBm dBm dBc/Hz
V mA µA dB dBc dBc MHz pp MHz/V MHz/°C
8-1
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