pHEMT MMIC. HMC7441 Datasheet

HMC7441 MMIC. Datasheet pdf. Equivalent

Part HMC7441
Description GaAs pHEMT MMIC
Feature AMPLIFIERS - LINEAR & POWER - CHIP v00.0913 Typical Applications The HMC7441 is ideal for: • Point-.
Manufacture Analog Devices
Datasheet
Download HMC7441 Datasheet



HMC7441
v00.0913
Typical Applications
The HMC7441 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• VSAT & SATCOM
• Military & Space
Functional Diagram
HMC7441
GaAs pHEMT MMIC 2 WATT
POWER AMPLIFIER, 27.5 - 31 GHz
Features
Saturated Output Power: +34 dBm @ 25% PAE
High Output IP3: +38 dBm
High Gain: 23 dB
DC Supply: +6V @ 1000 mA
No External Matching Required
Die Size: 3.18 x 2.84 x 0.1 mm
General Description
The HMC7441 is a three-stage GaAs pHEMT Power
Amplifier which operates between 27.5 and 31 GHz.
The amplifier provides 23 dB of gain and +34 dBm
of saturated output power at 25% PAE from a 6V
supply. With an excellent output IP3 of +38 dBm, the
HMC7441 is ideal for linear application such as Ka-
band VSAT or high capacity point-to-point or point-
to-multi-point radios demanding +34 dBm of efficient
saturated output power. The RF I/Os are DC blocked
and matched to 50 Ohms for ease of integration
into Multi-Chip-Modules (MCMs). All data is taken
with the chip in a 50 Ohm test fixture connected via
(1) 0.025mm (1 mil) diameter wire bonds of 0.31 mm
(12 mil) length.
Electrical Specifications, TA = +25° C
Vdd = Vdd1, Vdd2, Vdd3, Vdd4, Vdd5 = +6V, Idd = 1000 mA [1]
Parameter
Min.
Frequency Range
Gain
20
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
31
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)[2]
Total Supply Current (Idd)
[1] Adjust Vgg between -2 to 0V to achieve Idd = 1000 mA typical.
[2] Measurement taken at +6V @ 1000 mA, Pout / Tone = +28 dBm
Typ.
27.5 - 31
23
0.03
8
8
34
34
38
1000
Max.
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
mA
1
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Trademarks and registered trademarks arAe tphepplriocpearttyioofntheSir urespppecotivret:owPnehrso. ne: 978-250-3A3p4p3licaotrionaSpuppsp@orht:iPtthitoen.ec: o1-m800-ANALOG-D



HMC7441
v00.0913
Broadband Gain & Return Loss
vs. Frequency
30
20
10
0
-10
-20
-30
25 26 27 28 29 30 31 32 33
FREQUENCY (GHz)
S21
S11
S22
Input Return Loss vs. Temperature
0
-5
-10
-15
-20
-25
-30
-35
-40
27
28
29
30
31
32
FREQUENCY (GHz)
+25 C
+85 C
-55 C
P1dB vs. Temperature
37
35
33
31
29
27
25
27
28
29
30
FREQUENCY (GHz)
+25C
+85C
31
32
-55C
HMC7441
GaAs pHEMT MMIC 2 WATT
POWER AMPLIFIER, 27.5 - 31 GHz
Gain vs. Temperature
32
30
28
26
24
22
20
18
16
14
12
10
27
28
29
30
FREQUENCY (GHz)
+25 C
+85 C
31
32
-55 C
Output Return Loss vs. Temperature
0
-5
-10
-15
-20
-25
-30
-35
-40
27
28
29
30
31
32
FREQUENCY (GHz)
+25 C
+85 C
-55 C
P1dB vs. Supply Voltage
37
35
33
31
29
27
25
27
28
29
30
31
32
FREQUENCY (GHz)
5.5V
6V
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POhrodnee:r7O81n-3-2li9n-e47a0t0wwOrwde.hr oitntliitnee.catowmww.analog.com
2
Trademarks and registered trademarks arAe tphepplriocpearttyioofntheSir urespppecotivret:owPnehrso. ne: 978-250-3A3p4p3licaotrionaSpuppsp@orht:iPtthitoen.ec: o1-m800-ANALOG-D





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