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HMC770LP4BE

Analog Devices

GaAs pHEMT MMIC

HMC770LP4BE v02.1111 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz Amplifiers - Driver & Gain Block - SMT...


Analog Devices

HMC770LP4BE

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Description
HMC770LP4BE v02.1111 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz Amplifiers - Driver & Gain Block - SMT 6-1 Typical Applications Features The HMC770LP4BE is ideal for: High Output IP3: +40 dBm Cellular / PCS / 3G Single Positive Supply: +5V Fixed Wireless & WLAN Low Noise Figure: 2.5 dB [1] CATV, Cable Modem & DBS Differential RF I/O’s Microwave Radio & Test Equipment IF & RF Applications LETE Functional Diagram 20 Lead 4x4 mm SMT Package: 16mm² General Description The HMC770LP4BE is a GaAs pHEMT Differential Gain Block MMIC amplifier covering 40 MHz to 1 GHz and packaged in a 4x4 mm plastic QFN SMT package. This versatile amplifier can be used as a cascadable IF or RF gain stage in both 50 Ohm and 75 Ohm applications. The HMC770LP4BE delivers 16 dB gain, and +40 dBm output, with only 2.5 dB noise figure. Differential I/Os make this amplifier ideal for transimpedance and SAW filter applications, and in transceivers where the IF path must be handled differentially for improved noise performance. Evaluation PCBs are all available with either SMA (50Ω) or Type F (75Ω) connectors. SO Electrical Specifications, TA = +25° C, Vdd = Vdd1 = Vdd2 = +5V, Rbias = R1 = 200 Ω [2] Parameter Min. Typ. Max. Zo = 50 Ohms Min. Typ. Max. Zo =75 Ohms Units Frequency Range B Gain [2] 0.04 - 1 12 16.5 0.04 - 1 12 16 GHz dB Gain Variation Over Temperature 0.006 0.008 dB / °C Input Return Loss 17 15 dB O Output Return Loss 18 15 d...




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