pHEMT MMIC. HMC770LP4BE Datasheet

HMC770LP4BE MMIC. Datasheet pdf. Equivalent

Part HMC770LP4BE
Description GaAs pHEMT MMIC
Feature HMC770LP4BE v02.1111 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz Amplifiers - Drive.
Manufacture Analog Devices
Datasheet
Download HMC770LP4BE Datasheet



HMC770LP4BE
HMC770LP4BE
v02.1111
GaAs pHEMT 50 / 75 Ohm
DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz
6-1
Typical Applications
Features
The HMC770LP4BE is ideal for:
High Output IP3: +40 dBm
• Cellular / PCS / 3G
Single Positive Supply: +5V
• Fixed Wireless & WLAN
Low Noise Figure: 2.5 dB [1]
• CATV, Cable Modem & DBS
Differential RF I/O’s
• Microwave Radio & Test Equipment
• IF & RF Applications
LETE Functional Diagram
20 Lead 4x4 mm SMT Package: 16mm²
General Description
The HMC770LP4BE is a GaAs pHEMT Differential
Gain Block MMIC amplifier covering 40 MHz to 1
GHz and packaged in a 4x4 mm plastic QFN SMT
package. This versatile amplifier can be used as a
cascadable IF or RF gain stage in both 50 Ohm and
75 Ohm applications. The HMC770LP4BE delivers
16 dB gain, and +40 dBm output, with only 2.5 dB
noise figure. Differential I/Os make this amplifier ideal
for transimpedance and SAW filter applications, and
in transceivers where the IF path must be handled
differentially for improved noise performance.
Evaluation PCBs are all available with either SMA
(50Ω) or Type F (75Ω) connectors.
SO Electrical Specifications, TA = +25° C, Vdd = Vdd1 = Vdd2 = +5V, Rbias = R1 = 200 Ω [2]
Parameter
Min.
Typ.
Max.
Zo = 50 Ohms
Min.
Typ.
Max.
Zo =75 Ohms
Units
Frequency Range
B Gain [2]
0.04 - 1
12
16.5
0.04 - 1
12
16
GHz
dB
Gain Variation Over Temperature
0.006
0.008
dB / °C
Input Return Loss
17
15
dB
O Output Return Loss
18
15
dB
Output Power for 1 dB Compression (P1dB)
20
23
21
23.5
dBm
Output Third Order Intercept (IP3)
(Pout = 0 dBm per tone, 1 MHz spacing)
Noise Figure [2]
40
2.5
4
37.5
dBm
2.75
4
dB
Transimpedance
Input Referred Current Noise [3]
-
700
Ohms
-
6
pA / √Hz
Supply Current 1 (Idd1)
136
160
136
160
mA
Supply Current 2 (Idd2)
134
160
134
160
mA
[1] 1:1 Balun losses have NOT been removed from measurements. See list of materials for eval PCB for the type of balun.
[2] See application circuit
[3] Includes balun loss, no photo diode. See list of materials for eval PCB for the type of balun.
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Trademarks and registered trademarks are the property oAf tphepir rleicspaecttiivoenowSneursp. port: Phone: pApllp@lihcaittitoitneS.cupopmort: Phone: 1-800-ANALOG-D



HMC770LP4BE
Gain & Return Loss [1]
20
v02.1111
HMC770LP4BE
GaAs pHEMT 50 / 75 Ohm
DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz
50 Ohm Data
Gain vs. Temperature [1]
20
10
15
0
S21
S11
S22
-10
-20
E -30
0
0.2
0.4
0.6
0.8
1
FREQUENCY (GHz)
T Gain vs. Vdd [1]
20
E 15
L 10
4.5V
5.0V
5.5V
5
O 0
0
0.2
0.4
0.6
0.8
1
S FREQUENCY (GHz)
B Return Loss vs. Temperature [1]
0
-5
+25C
S22
O+85C
10
5
0
0
+25C
+85C
-40C
0.2
0.4
0.6
0.8
FREQUENCY (GHz)
Gain vs. Rbias
20
15
10
Rbias = 1.5k Ohms
Rbias = 600 Ohms
Rbias = 200 Ohms
5
0
0
0.2
0.4
0.6
0.8
FREQUENCY (GHz)
Return Loss vs. Vdd [1]
0
-5
4.5V
5.0V
1
1
-10
-40C
-10
5.5V
S22
-15
-15
-20
-20
S11
S11
-25
-25
-30
0
0.2
0.4
0.6
0.8
1
FREQUENCY (GHz)
-30
0
0.2
0.4
0.6
0.8
1
FREQUENCY (GHz)
[1] Rbias=R1=200 Ohms. See application circuit
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Trademarks and registered trademarks are the property of theirArepsppecltiicveaotwinoenrs. Support: pll@Ahpitptilitcea.tcioonmSupport: Phone: 1-800-ANALOG-D
6-2





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