GaAs pHEMT MMIC
HMC770LP4BE
v02.1111
GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz
Amplifiers - Driver & Gain Block - SMT...
Description
HMC770LP4BE
v02.1111
GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz
Amplifiers - Driver & Gain Block - SMT
6-1
Typical Applications
Features
The HMC770LP4BE is ideal for:
High Output IP3: +40 dBm
Cellular / PCS / 3G
Single Positive Supply: +5V
Fixed Wireless & WLAN
Low Noise Figure: 2.5 dB [1]
CATV, Cable Modem & DBS
Differential RF I/O’s
Microwave Radio & Test Equipment IF & RF Applications
LETE Functional Diagram
20 Lead 4x4 mm SMT Package: 16mm²
General Description
The HMC770LP4BE is a GaAs pHEMT Differential Gain Block MMIC amplifier covering 40 MHz to 1 GHz and packaged in a 4x4 mm plastic QFN SMT package. This versatile amplifier can be used as a cascadable IF or RF gain stage in both 50 Ohm and 75 Ohm applications. The HMC770LP4BE delivers 16 dB gain, and +40 dBm output, with only 2.5 dB noise figure. Differential I/Os make this amplifier ideal for transimpedance and SAW filter applications, and in transceivers where the IF path must be handled differentially for improved noise performance. Evaluation PCBs are all available with either SMA (50Ω) or Type F (75Ω) connectors.
SO Electrical Specifications, TA = +25° C, Vdd = Vdd1 = Vdd2 = +5V, Rbias = R1 = 200 Ω [2]
Parameter
Min.
Typ.
Max.
Zo = 50 Ohms
Min.
Typ.
Max.
Zo =75 Ohms
Units
Frequency Range
B Gain [2]
0.04 - 1
12
16.5
0.04 - 1
12
16
GHz dB
Gain Variation Over Temperature
0.006
0.008
dB / °C
Input Return Loss
17
15
dB
O Output Return Loss
18
15
d...
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