I/Q Upconverter. HMC815B Datasheet

HMC815B Upconverter. Datasheet pdf. Equivalent

Part HMC815B
Description I/Q Upconverter
Feature Data Sheet FEATURES Conversion gain: 12 dB typical Sideband rejection: 20 dBc typical OP1dB compress.
Manufacture Analog Devices
Datasheet
Download HMC815B Datasheet



HMC815B
Data Sheet
FEATURES
Conversion gain: 12 dB typical
Sideband rejection: 20 dBc typical
OP1dB compression: 20 dBm typical
OIP3: 27 dBm typical
2× LO to RF isolation: 10 dB typical
2× LO to IF isolation: 15 dB typical
RF return loss: 12 dB typical
LO return loss: 15 dB typical
IF return loss: 15 dB typical
Exposed pad, 4.90 mm × 4.90 mm, 32-terminal, ceramic LCC
APPLICATIONS
Point to point and point to multipoint radios
Military radars, electronic warfare, and electronic
intelligence
Satellite communications
Sensors
21 GHz to 27 GHz,
GaAs, MMIC, I/Q Upconverter
HMC815B
FUNCTIONAL BLOCK DIAGRAM
NIC 1
NIC 2
NIC 3
NIC 4
NIC 5
×2
VDD1 6
NIC 7
NIC 8
NIC = NOT INTERNALLY CONNECTED
Figure 1.
24 NIC
23 NIC
22 NIC
21 VDD2
20 NIC
19 NIC
18 VDD3
17 NIC
PACKAGE
BASE
GND
GENERAL DESCRIPTION
The HMC815B is a compact gallium arsenide (GaAs),
pseudomorphic high electron mobility transistor (pHEMT),
monolithic microwave integrated circuit (MMIC) upconverter
in a RoHS compliant package that operates from 21 GHz to
27 GHz. This device provides a small signal conversion gain of
12 dB and a sideband rejection of 20 dBc. The HMC815B
utilizes a driver amplifier proceeded by an in phase/quadrature
(I/Q) mixer where the LO is driven by an active 2× multiplier.
IF1 and IF2 mixer inputs are provided, and an external 90°
hybrid is needed to select the required sideband. The I/Q mixer
topology reduces the need for filtering of unwanted sideband.
The HMC815B is a smaller alternative to hybrid style single
sideband (SSB) downconverter assemblies, and it eliminates the
need for wire bonding by allowing the use of surface-mount
manufacturing techniques.
The HMC815B is available in 4.90 mm × 4.90 mm, 32-terminal
ceramic LCC package and operates over the −40°C to +85°C
temperature range. An evaluation board for the HMC815B is
also available upon request.
Rev. 0
Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
©2018 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com



HMC815B
HMC815B
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Absolute Maximum Ratings............................................................ 4
Thermal Resistance ...................................................................... 4
ESD Caution.................................................................................. 4
Pin Configuration and Function Descriptions............................. 5
Interface Schematics..................................................................... 6
Typical Performance Characteristics ............................................. 7
IF = 2500 MHz, IF Input Power = 0 dBm, Lower Sideband
(High-Side LO) ............................................................................. 7
IF = 100 MHz, IF Input Power = 0 dBm, Lower Sideband
(High-Side LO) ............................................................................. 9
IF = 3750 MHz, IF Input Power = 0 dBm, Lower Sideband
(High-Side LO) ........................................................................... 11
REVISION HISTORY
1/2018—Revision 0: Initial Version
Data Sheet
IF = 100 MHz, IF Input Power = 0 dBm, Upper Sideband
(Low-Side LO) ............................................................................ 13
IF = 2500 MHz, RF Input Power = 0 dBm, Upper Sideband
(Low-Side LO) ............................................................................ 15
IF = 3750 MHz, RF Input Power = 0 dBm, Upper Sideband
(Low-Side LO) ............................................................................ 17
Isolation and Return Loss ......................................................... 19
IF Bandwidth Performance: Lower Sideband (High-Side LO)..22
IF Bandwidth Performance: Upper Sideband (Low-Side LO) ...23
Spurious Performance ............................................................... 24
Theory of Operation ...................................................................... 26
Applications Information .............................................................. 27
Typical Application Circuit ....................................................... 27
Evaluation Board Information ................................................. 28
Outline Dimensions ....................................................................... 30
Ordering Guide .......................................................................... 30
Rev. 0 | Page 2 of 30





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)