I/Q UPCONVERTER. HMC815LC5 Datasheet

HMC815LC5 UPCONVERTER. Datasheet pdf. Equivalent

Part HMC815LC5
Description GaAs MMIC I/Q UPCONVERTER
Feature v04.0614 HMC815LC5 GaAs MMIC I/Q UPCONVERTER 21 - 27 GHz Mixers - Upcoverter - SMT Typical Applic.
Manufacture Analog Devices
Datasheet
Download HMC815LC5 Datasheet



HMC815LC5
v04.0614
HMC815LC5
GaAs MMIC I/Q UPCONVERTER
21 - 27 GHz
Typical Applications
Features
The HMC815LC5 is ideal for:
High Conversion Gain: 12 dB
• Point-to-Point and Point-to-Multi-Point Radios
Sideband Rejection: -20 dBc
• Military Radar, EW & ELINT
2 LO to RF Isolation: 10 dB
• Satellite Communications
Output IP3: +27 dBm
• Sensors
OLETE Functional Diagram
32 Lead 5x5mm SMT Ceramic Package: 25mm²
General Description
The HMC815LC5 is a compact GaAs MMIC I/Q
upconverter in a leadless RoHS compliant SMT
package. This device provides a small signal
conversion gain of 12 dB and sideband rejection of
-20 dBc. The HMC815LC5 utilizes a driver amplifier
preceded by an I/Q mixer where the LO is driven by
an active x2 multiplier. IF1 and IF2 mixer inputs are
provided and an external 90° hybrid is needed to
select the required sideband. The I/Q mixer topology
reduces the need for filtering of the unwanted
sideband. The HMC815LC5 is a much smaller
alternative to hybrid style single sideband upconverter
assemblies and it eliminates the need for wire
bonding by allowing the use of surface mount
manufacturing techniques.
S Electrical Specifications,
TA = +25°C, IF = 2500 MHz, LO = +4 dBm, Vdd1, 2, 3 = +4.5V, Idd2 + Idd3 = 270 mA [1][3]
Parameter
Min.
Typ.
Max.
Units
B Frequency Range, RF
21 - 27
GHz
Frequency Range, LO
10.5 - 14.5
GHz
Frequency Range, IF
DC - 3.75
GHz
O Conversion Gain
7
12
dB
Sideband Rejection
-20
dBc
1 dB Compression (Output)
17
20
dBm
2 LO to RF Isolation
10
dB
2 LO to IF Isolation [2]
15
dB
IP3 (Output)
27
dBm
Supply Current Idd1
95
120
mA
Supply Current Idd2 + Idd3
270
300
mA
[1] Unless otherwise noted all measurements performed with high side LO, IF = 2500 MHz and external 90° IF hybrid.
[2] Data taken without external IF hybrid.
[3] Adjust Vgg between -2 to 0V to achieve Idd2 + Idd3 = 270 mA Typical.
InFforomratpionrifcureni,shdedelbiyveAnrayloag nDdevictoes pislabeclieeveodrtdo ebresa:ccHuriattteitaendMreilciarbolew. HaovweeveCr, onorpoFroartipornic,e2, dEeliivzearyb,eatnhdDtorivpela,ceCohredlemrss: fAonradlo, gMDAev0ic1e8s2, 4Inc.,
1
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that mPayhreosunltefr:om97its8u-s2e.5S0pe-c3ific3a4tio3ns subFjecat xto:c9ha7ng8e-w2i5tho0u-t 3no3tic7e3. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
OOPhrndoeneTere:cO7h8nn1o--3lloi2ng9ye-4Wa7a0ty0w, •Pw.OOwr.d.Behorixtotn9itl1ien0.e6c,aoNtmworwwwoo.adn,aMloAg.0c2o0m62-9106
Trademarks and registered trademarks aArepthpe lpircopaetrtiyoonf thSeirurepsppeoctrivte: oPwnheorsn. e: 978-250-33A4p3plicoartioanpSpuspp@ohrti:tPtihteon.ce:o1m-800-ANALOG-D



HMC815LC5
HMC815LC5
v04.0614
GaAs MMIC I/Q UPCONVERTER
21 - 27 GHz
Data Taken as SSB Upconverter with External IF Hybrid, IF = 2500 MHz
Conversion Gain, LSB vs. Temperature
Conversion Gain, LSB vs. LO Drive
20
20
18
18
16
16
14
14
12
12
10
8
6
4
E 20
21 22 23 24 25 26
RF FREQUENCY (GHz)
+25 C
+85 C
27 28
-40 C
T Conversion Gain, LSB vs. Vdd
20
E 18
16
14
L 12
10
8
6
O 4
20 21 22 23 24 25 26 27 28
RF FREQUENCY (GHz)
4.25V
4.5V
4.75V
BS LO Return Loss vs. Temperature
0
O -10
10
8
6
4
20 21 22 23 24 25 26 27 28
RF FREQUENCY (GHz)
2 dBm
4 dBm
6 dBm
RF Return Loss vs. Temperature
0
-10
-20
-30
-40
20
21 22 23 24 25 26
RF FREQUENCY (GHz)
+25 C
+85 C
27 28
-40 C
IF Return Loss [1]
0
-10
-20
-20
-30
-30
-40
5
7
9
11
LO FREQUENCY (GHz)
+25 C
+85 C
13
15
-40 C
-40
0
1
2
3
IF FREQUENCY (GHz)
IF1
4
IF2
[1] Data taken without external IF hybrid
IrrliniecgfseohpFntrsomsoenoasfrtiisibtohpingilrirtdryafuinpcirstnaeeairdstsi,hesbesudydmtheimebaldtypimlvbiAcyaeanyPAtariorlnyhoenagsoluooalDrgntneofDerdvtohei:mceverti9cwisotes7issiusep8fsobeu-lra.ne2idtSlcis5eepvuere0escade-inof,i3yctnroa3opdtriabo4eftenoe3srrnastascnou:cyrbuHjipernFaacfirtttteieanttnogixattecne:rmhdiga9ehMnrnte7gstlsei8iaocobwf-frlA2ieptohn.a5oawtHuel0otongawnt-sov3Deotviee3creveor7i,.cCtheN3nesooor. rpFOPoOohnrroarednptTieeroei:crcn7ehO8,,n12nod-3le-oE2llgii9vlnyie-ze4rWay7,aab0yat0e,nwt•Pdh.OwOtDor.wdBrepi.ovrlhaxeoictn9,etl1iiCtn0oee6hr.d,aceeNtolrmwosm:rwwsAwfonoo.aardldno,a,gMloMADge.A0cv2oi0c0me61s28,-29In140c.6,
2
Trademarks and registered trademarks areAthpepprloicpeartytioof ntheSir ruesppepcotivreto:wPnehrso. ne: 978-250-3A3p4p3licaotrionaSpuppsp@orth: iPtthiotene.c: o1-m800-ANALOG-D





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)