NOISE AMPLIFIER. HMC816LP4E Datasheet

HMC816LP4E AMPLIFIER. Datasheet pdf. Equivalent

Part HMC816LP4E
Description SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER
Feature Amplifiers - Low Noise - SMT 7 7-1 HMC816LP4E v00.1108 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMP.
Manufacture Analog Devices
Datasheet
Download HMC816LP4E Datasheet



HMC816LP4E
7
7-1
HMC816LP4E
v00.1108
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 230 - 660 MHz
Typical Applications
The HMC816LP4E is ideal for:
Features
Low Noise Figure: 0.5 dB
• Cellular/3G and LTE/WiMAX/4G
High Gain: 22 dB
• BTS & Infrastructure
High Output IP3: +37 dBm
• Repeaters and Femtocells
Single Supply: +3V to +5V
• Public Safety Radio
• Multi-Channel Applications
OLETE Functional Diagram
50 Ohm Matched Input/Output
24 Lead 4x4mm QFN Package: 16 mm2
General Description
The HMC816LP4E is a GaAs pHEMT Dual Channel
Low Noise Amplifier that is ideal for Cellular/3G and
LTE/WiMAX/4G basestation front-end receivers
operating between 230 and 660 MHz. The amplifier
has been optimized to provide 0.5 dB noise figure,
22 dB gain and +37 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent with minimal external matching and bias
decoupling components. The HMC816LP4E shares
the same package and pinout with the HMC817-
LP4E & HMC818LP4E LNAs. The HMC817LP4E can
be biased with +3V to +5V and features an externally
adjustable supply current which allows the designer
to tailor the linearity performance of each channel of
the LNA for each application.
S Electrical Specifications, TA = +25° C,
B Rbias 1, 2 = 10k Ohms*, Vdd = Vdd1, Vdd2 = +5V, Idd = Idd1, Idd2
Parameter
O Frequency Range
Vdd = +3V
Min. Typ. Max. Min. Typ. Max.
230 - 450
450 - 660
Vdd = +5V
Min. Typ. Max. Min. Typ. Max.
230 - 450
450 - 660
Units
MHz
Gain
17
21
14
17
19
22
15
19
dB
Gain Variation Over Temperature
0.001
0.002
0.005
0.007
dB/ °C
Noise Figure
0.5 0.9
0.5 0.9
0.5 0.9
0.5 0.9
dB
Input Return Loss
13
17
15
16
dB
Output Return Loss
12
10
13
10
dB
Output Power for 1 dB
Compression (P1dB)
10
14
13
16
15
19
18
21
dBm
Saturated Output Power (Psat)
10
15
14 16.5
16
20
18
21
dBm
Output Third Order Intercept (IP3)
26
28
34
37
dBm
Supply Current (Idd)
24
34
44
24
34
44
68
97 126 68
97 126 mA
* Rbias sets current, see application circuit herein
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HMC816LP4E
v00.1108
HMC816LP4E
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 230 - 660 MHz
7
Broadband Gain & Return Loss
Gain vs. Temperature [1]
25
24
20
S21
15
22
10
Vdd= 5V
5
Vdd= 3V
20
0
-5
S22
-10
-15
-20
S11
-25
E 0.2
0.4
0.6
0.8
1
FREQUENCY (GHz)
1.2
1.4
T Gain vs. Temperature [2]
24
E 22
L 20
18
+25C
O 16
+85C
- 40C
14
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7
FREQUENCY (GHz)
BS Output Return Loss vs. Temperature [1]
0
-5
+25C
+85C
O- 40C
18
+25C
16
+85C
- 40C
14
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7
FREQUENCY (GHz)
Input Return Loss vs. Temperature [1]
0
-5
+25C
+85C
- 40C
-10
-15
-20
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7
FREQUENCY (GHz)
Reverse Isolation vs. Temperature [1]
0
-5
-10
+25C
+85C
-15
- 40C
-10
-20
-25
-15
-30
-35
-20
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7
FREQUENCY (GHz)
-40
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7
FREQUENCY (GHz)
[1] Vdd = 5V [2] Vdd = 3V
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responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that maPy rhesoulnt fero:m9it7s u8s-e2. S5p0ec-if3ica3ti4on3s subjeFctatoxc:h9an7ge8w-2ith5ou0t -n3oti3ce7. 3No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
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Trademarks and registered trademarks areAtphepplroicpearttyioofntheSir ruespppecotivret:owPnehrso. ne: 978-250-3A3p4p3licaotrionaSpuppsp@orht:iPtthitoen.ec: o1-m800-ANALOG-D
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