NOISE AMPLIFIER. HMC817LP4E Datasheet

HMC817LP4E AMPLIFIER. Datasheet pdf. Equivalent

Part HMC817LP4E
Description SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER
Feature Amplifiers - Low Noise - SMT 7 7-1 HMC817LP4E v00.1108 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMP.
Manufacture Analog Devices
Datasheet
Download HMC817LP4E Datasheet



HMC817LP4E
7
7-1
HMC817LP4E
v00.1108
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 550 - 1200 MHz
Typical Applications
The HMC817LP4E is ideal for:
Features
Noise Figure: 0.5 dB
• Cellular/3G and LTE/WiMAX/4G
Gain: 16 dB
• BTS & Infrastructure
Output IP3: +37 dBm
• Repeaters and Femtocells
Single Supply: +3V to +5V
• Multi-Channel Applications
• Access Points
OLETE Functional Diagram
50 Ohm Matched Input/Output
24 Lead 4x4mm QFN Package: 16 mm2
General Description
The HMC817LP4E is a GaAs pHEMT Dual Chan-
nel Low Noise Amplifier that is ideal for Cellular/3G
and LTE/WiMAX/4G basestation front-end receivers
operating between 550 and 1200 MHz. The amplifier
has been optimized to provide 0.5 dB noise figure,
24 dB gain and +37 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent with minimal external matching and bias
decoupling components. The HMC817LP4E shares
the same package and pinout with the HMC816LP4E
and HMC818LP4E LNAs. The HMC817LP4E can be
biased with +3V to +5V and features an externally
adjustable supply current which allows the designer
to tailor the linearity performance of each channel of
the LNA for each application.
S Electrical Specifications, TA = +25° C,
Rbias 1, 2 = 10k Ohms* Vdd = Vdd1 = Vdd2 = +5V, Idd = Idd1 = Idd2
B Parameter
O Frequency Range
Vdd = +3 V
Min. Typ. Max. Min. Typ. Max.
698 - 960
550 - 1200
Vdd = +5 V
Min. Typ. Max. Min. Typ. Max.
698 - 960
550 - 1200
Units
MHz
Gain
13
16
11
15
13.5 16
11.5 16
dB
Gain Variation Over Temperature
0.003
0.003
0.005
0.005
dB/ °C
Noise Figure
0.5 0.8
0.5 1.1
0.55 0.85
0.6 1.1
dB
Input Return Loss
28
22
22
17
dB
Output Return Loss
12
14
12
15
dB
Output Power for 1 dB
Compression (P1dB)
14
16
12.5 16.5
18.5 20.5
16.5 21
dBm
Saturated Output Power (Psat)
17
17.5
21
21.5
dBm
Output Third Order Intercept (IP3)
31
30
37
37
dBm
Supply Current (Idd)
24
34
44
24
34
44
65
95 124 65
95 124 mA
* Rbias resistor sets current, see application circuit herein
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HMC817LP4E
v00.1108
HMC817LP4E
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 550 - 1200 MHz
Broadband Gain & Return Loss
25
S21
15
5
Vdd= 5V
Vdd= 3V
7
Gain vs. Temperature [1]
22
20
+25C
+85C
18
- 40C
-5
S22
-15
-25
S11
-35
E 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
FREQUENCY (GHz)
T Gain vs. Temperature [2]
22
E 20
+25C
+85C
18
- 40C
L 16
14
O 12
10
0.5 0.6 0.7 0.8 0.9
1
1.1 1.2 1.3
FREQUENCY (GHz)
BS Output Return Loss vs. Temperature [1]
0
-5
O -10
16
14
12
10
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
FREQUENCY (GHz)
Input Return Loss vs. Temperature [1]
0
-5
+25 C
+85 C
-10
- 40 C
-15
-20
-25
-30
-35
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
FREQUENCY (GHz)
Reverse Isolation vs. Temperature [1]
0
-5
-10
+25 C
+85 C
- 40 C
-15
-15
-20
+25 C
+85 C
-20
- 40 C
-25
-25
-30
0.5 0.6 0.7 0.8 0.9
1
1.1 1.2 1.3
FREQUENCY (GHz)
-30
0.5 0.6 0.7 0.8 0.9
1
1.1 1.2 1.3
FREQUENCY (GHz)
[1] Vdd = 5V [2] Vdd = 3V
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