HMC817LP4E

Amplifiers - Low Noise - SMT 7 7-1 HMC817LP4E v00.1108 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 550 - 1200 MHz Typical Applications The HMC817LP4E is ideal for: Features Noise Figure: 0.5 dB Cellular/3G and LTE/WiMAX/4G Gain: 16 dB BTS & Infrastructure Output IP3: +37 dBm Repeaters and Femtocells Single Supply: +3V to +5V Multi-Channel Applications Access Points OLETE Functional Diagram 50 Ohm Matched Input/Output 24 Lead 4x4mm QFN Package: 16 mm2 General Description The HMC817LP4E is a GaAs pHEMT Dual Channel Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 550 and 1200 MHz. The amplifier has been optimized to provide 0.5 dB noise figure, 24 dB gain and +37 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent with minimal external matching and bias decoupling components. The HMC817LP4E shares the same package and pinout with the HMC816LP4E and HMC818LP4E LNAs. The HMC817LP4E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of each channel of the LNA for each application. S Electrical Specifications, TA = +25° C, Rbias 1, 2 = 10k Ohms* Vdd = Vdd1 = Vdd2 = +5V, Idd = Idd1 = Idd2 B Parameter O Frequency Range Vdd = +3 V Min. Typ. Max. Min. Typ. Max. 698 - 960 550 - 1200 Vdd = +5 V Min. Typ. Max. Min. Typ. Max. 698 - 960 550 - 1200 Units MH...