HMC818LP4E

Amplifiers - Low Noise - SMT 7 7-1 HMC818LP4E v01.0809 GaAs SMT pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Typical Applications Features The HMC818LP4E is ideal for: Low Noise Figure: 0.85 dB Cellular/3G and LTE/WiMAX/4G High Gain: 20.5 dB BTS & Infrastructure High OIP3: +35 dBm Repeaters and Femtocells Single Supply: +3V to +5V Public Safety Radios LETE Functional Diagram 50 Ohm Matched Input/Output 24 Lead 4x4mm QFN Package: 16mm² General Description The HMC818LP4E is a GaAs pHEMT Dual Channel Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 1.7 - 2.2 GHz. The amplifier has been optimized to provide 0.85 dB noise figure, 20.5 dB gain and +35 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC818LP4E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of each channel of the LNA for a specific application. SO Electrical Specifications, B TA = +25° C, Rbias = 10K, Vdd= Vdd1, 2, 3, 4, Idd = Idd1 + Idd2, Idd3 + Idd4 Parameter Vdd = 3V Vdd = 5V Units Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. O Frequency Range 1700 - 2000 2000 - 2200 1700 - 2000 2000 - 2200 MHz Gain 15 18 14 16.5 17 20.5 15.5 17.5 dB Gain Variation Over Temperatu...