NOISE AMPLIFIER. HMC818LP4E Datasheet

HMC818LP4E AMPLIFIER. Datasheet pdf. Equivalent

Part HMC818LP4E
Description GaAs SMT pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER
Feature Amplifiers - Low Noise - SMT 7 7-1 HMC818LP4E v01.0809 GaAs SMT pHEMT DUAL CHANNEL LOW NOISE AMP.
Manufacture Analog Devices
Datasheet
Download HMC818LP4E Datasheet



HMC818LP4E
7
7-1
HMC818LP4E
v01.0809
GaAs SMT pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
Typical Applications
Features
The HMC818LP4E is ideal for:
Low Noise Figure: 0.85 dB
• Cellular/3G and LTE/WiMAX/4G
High Gain: 20.5 dB
• BTS & Infrastructure
High OIP3: +35 dBm
• Repeaters and Femtocells
Single Supply: +3V to +5V
• Public Safety Radios
LETE Functional Diagram
50 Ohm Matched Input/Output
24 Lead 4x4mm QFN Package: 16mm²
General Description
The HMC818LP4E is a GaAs pHEMT Dual Channel
Low Noise Amplifier that is ideal for Cellular/3G and
LTE/WiMAX/4G basestation front-end receivers
operating between 1.7 - 2.2 GHz. The amplifier has
been optimized to provide 0.85 dB noise figure,
20.5 dB gain and +35 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent and the LNA requires minimal external
matching and bias decoupling components. The
HMC818LP4E can be biased with +3V to +5V and
features an externally adjustable supply current which
allows the designer to tailor the linearity performance
of each channel of the LNA for a specific application.
SO Electrical Specifications,
B TA = +25° C, Rbias = 10K, Vdd= Vdd1, 2, 3, 4, Idd = Idd1 + Idd2, Idd3 + Idd4
Parameter
Vdd = 3V
Vdd = 5V
Units
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
O Frequency Range
1700 - 2000
2000 - 2200
1700 - 2000
2000 - 2200
MHz
Gain
15
18
14 16.5
17 20.5
15.5 17.5
dB
Gain Variation Over Temperature
0.010
0.008
0.015
0.012
dB/°C
Noise Figure
0.95 1.2
0.95 1.2
0.85 1.1
0.85 1.1
dB
Input Return Loss
18
17
21
18
dB
Output Return Loss
16
15
15
13
dB
Output Power for 1 dB
Compression (P1dB)
14
15
19
21
dBm
Saturated Output Power (Psat)
15
16
20
21.5
dBm
Output Third Order Intercept (IP3)
24.5
25
33
35
dBm
Supply Current (Idd)
30
42
55
30
42
55
78 112 146 78 112 146 mA
* Rbias resistor sets current, see application circuit herein
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HMC818LP4E
HMC818LP4E
v01.0809
GaAs SMT pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
7
Broadband Gain & Return Loss [1] [2]
Gain vs. Temperature [1]
25
26
S21
15
24
22
5
Vdd=5V
Vdd=3V
20
-5
S22
-15
-25
S11
-35
E 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3
FREQUENCY (GHz)
T Gain vs. Temperature [2]
26
E 24
22
L 20
18
16
+25C
+85C
O 14
- 40C
12
1.6
1.7
1.8
1.9
2
2.1
2.2
2.3
FREQUENCY (GHz)
BS Output Return Loss vs. Temperature [1]
0
-5
+25 C
+85 C
O -10
- 40 C
18
16
+25C
+85C
14
- 40C
12
1.6
1.7
1.8
1.9
2
2.1
2.2
2.3
FREQUENCY (GHz)
Input Return Loss vs. Temperature [1]
0
-5
+25 C
+85 C
-10
- 40 C
-15
-20
-25
-30
-35
1.6
1.7
1.8
1.9
2
2.1
2.2
2.3
FREQUENCY (GHz)
Reverse Isolation vs. Temperature [1]
0
-5
-10
+25 C
+85 C
-15
- 40 C
-15
-20
-20
-25
-25
-30
-30
-35
-35
1.6
1.7
1.8
1.9
2
2.1
2.2
2.3
FREQUENCY (GHz)
-40
1.6
1.7
1.8
1.9
2
2.1
2.2
2.3
FREQUENCY (GHz)
[1] Vdd = 5V, Rbias = 10K [2] Vdd = 3V, Rbias = 10K
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license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
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