GaAs pHEMT MMIC
Amplifiers - Linear & Power - Chip
v03.0611
Typical Applications
The HMC950 is ideal for:
• Point-to-Point Radios
3...
Description
Amplifiers - Linear & Power - Chip
v03.0611
Typical Applications
The HMC950 is ideal for:
Point-to-Point Radios
3
Point-to-Multi-Point Radios
VSAT & SATCOM
Military & Space
Functional Diagram
HMC950
GaAs pHEMT MMIC 4 WATT POWER AMPLIFIER, 12 - 16 GHz
Features
Saturated Output Power: +37 dBm @ 23% PAE High Output IP3: +44.5 dBm High Gain: 28 dB DC Supply: +7V @ 2400 mA No External Matching Required Die Size: 3.23 x 3.45 x 0.1 mm
General Description
The HMC950 is a four stage GaAs pHEMT MMIC 4 Watt Power Amplifier which operates between 12 and 16 GHz. The HMC950 provides 28 dB of gain, +37 dBm of saturated output power, and 23% PAE from a +7V power supply. The HMC950 exhibits excellent linearity and is optimized for high capacity point to point and point to multi-point radio systems. It is also ideal for 13.75 to 14.5 GHz Ku Band VSAT transmitters as well as SATCOM applications. The amplifier configuration and high gain make it an excellent candidate for last stage signal amplification before the antenna. All data is taken with the chip in a 50 Ohm test fixture connected via (2) 0.025 mm (1 mil) diameter wire bonds of 0.31 mm (12 mil) length.
3-1
Electrical Specifications, TA = +25° C
Vdd = Vdd1, Vdd2, Vdd3, Vdd4, Vdd5, Vdd6, Vdd7, Vdd8 = +7V, Idd = 2400 mA [1]
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Frequency Range
12 - 13
13 - 16
Gain
26
28
26
28
Gain Variation Over Temperature
0.056
0.056
Input Return Loss
17
16
Output Return Loss
1...
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