AIMW120R045M1

AIMW120R045M1 AIMW120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Revolutionary semiconductor material - Silicon Carbide  Very low switching losses  Threshold-free on state characteristic  IGBT-compatible driving voltage (15V for turn-on)  0V turn-off gate voltage  Benchmark gate threshold voltage, VGS(th)=4.5V  Fully controllable dv/dt  Commutation robust body diode, ready for synchronous rectification  Temperature independent turn-off switching losses Benefits  Efficiency improvement  Enabling higher frequency  Increased power density  Cooling effort reduction  Reduction of system complexity and cost Potential Applications  On-board Charger/PFC  Booster/DC-DC Converter  Auxilliary Inverter Product Validation Qualified for Automotive Applications. Product Validation according to AEC-Q100/101” Table 1 Key Performance and Package Parameters Type ID RDS(on),typ VDS (TC=25°C, (Tvj=25°C, ID=20A, Tvjmax Rth(j-c,max)) VGS=15V) AIMW120R045M1 1200V 52A 45mΩ 175°C Marking A120M1045 SP Number SP002472666 Package PG-TO247-3-41 Datasheet Please read the Important Notice and Warnings at the end of this document www.infineon.com/sic V3.0 2019-09-22 AIMW120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Table of contents Features 1 Benefits 1 Potential Applications..................................................................................................................... 1 Product Validation ..................................