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AIMW120R045M1 Datasheet, Equivalent, Carbide MOSFET.

Silicon Carbide MOSFET

Silicon Carbide MOSFET

 

 

 

Part AIMW120R045M1
Description Silicon Carbide MOSFET
Feature AIMW120R045M1 AIMW120R045M1 CoolSiC™ 1 200V SiC Trench MOSFET Silicon Carbide MOSFET Features Revolutionary semicond uctor material - Silicon Carbide Very low switching losses Threshold-free on state characteristic IGBT-compatible driving voltage (15V for turn-on) 0V t urn-off gate voltage Benchmark gate th reshold voltage, VGS(th)=4.
5V Fully co ntrollable dv/dt Commutation robust bo dy diode, ready for synchronous rectifi cation Temperature independent turn-of f switching losses Benefits Efficiency improvement Enabling higher frequency Increased power density Cooling effo rt reduction Re .
Manufacture Infineon
Datasheet
Download AIMW120R045M1 Datasheet
Part AIMW120R045M1
Description Silicon Carbide MOSFET
Feature AIMW120R045M1 AIMW120R045M1 CoolSiC™ 1 200V SiC Trench MOSFET Silicon Carbide MOSFET Features Revolutionary semicond uctor material - Silicon Carbide Very low switching losses Threshold-free on state characteristic IGBT-compatible driving voltage (15V for turn-on) 0V t urn-off gate voltage Benchmark gate th reshold voltage, VGS(th)=4.
5V Fully co ntrollable dv/dt Commutation robust bo dy diode, ready for synchronous rectifi cation Temperature independent turn-of f switching losses Benefits Efficiency improvement Enabling higher frequency Increased power density Cooling effo rt reduction Re .
Manufacture Infineon
Datasheet
Download AIMW120R045M1 Datasheet

AIMW120R045M1

AIMW120R045M1
AIMW120R045M1

AIMW120R045M1

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