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AIMW120R045M1 Datasheet, Equivalent, Carbide MOSFET.Silicon Carbide MOSFET Silicon Carbide MOSFET |
| Part | AIMW120R045M1 |
|---|---|
| Description | Silicon Carbide MOSFET |
| Feature | AIMW120R045M1
AIMW120R045M1
CoolSiC™ 1 200V SiC Trench MOSFET Silicon Carbide MOSFET
Features
Revolutionary semicond uctor material - Silicon Carbide Very low switching losses Threshold-free on state characteristic IGBT-compatible driving voltage (15V for turn-on) 0V t urn-off gate voltage Benchmark gate th reshold voltage, VGS(th)=4. 5V Fully co ntrollable dv/dt Commutation robust bo dy diode, ready for synchronous rectifi cation Temperature independent turn-of f switching losses Benefits Efficiency improvement Enabling higher frequency Increased power density Cooling effo rt reduction Re . |
| Manufacture | Infineon |
| Datasheet |
| Part | AIMW120R045M1 |
|---|---|
| Description | Silicon Carbide MOSFET |
| Feature | AIMW120R045M1
AIMW120R045M1
CoolSiC™ 1 200V SiC Trench MOSFET Silicon Carbide MOSFET
Features
Revolutionary semicond uctor material - Silicon Carbide Very low switching losses Threshold-free on state characteristic IGBT-compatible driving voltage (15V for turn-on) 0V t urn-off gate voltage Benchmark gate th reshold voltage, VGS(th)=4. 5V Fully co ntrollable dv/dt Commutation robust bo dy diode, ready for synchronous rectifi cation Temperature independent turn-of f switching losses Benefits Efficiency improvement Enabling higher frequency Increased power density Cooling effo rt reduction Re . |
| Manufacture | Infineon |
| Datasheet |
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