Silicon Carbide MOSFET
IMW120R060M1H
IMW120R060M1H
CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET
Features
Very low switching los...
Description
IMW120R060M1H
IMW120R060M1H
CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET
Features
Very low switching losses
Gate
pin 1
Threshold-free on state characteristic
Wide gate-source voltage range
Benchmark gate threshold voltage, VGS(th) = 4.5V
0V turn-off gate voltage for easy and simple gate drive
Fully controllable dV/dt
Robust body diode for hard commutation
Temperature independent turn-off switching losses
Benefits
Efficiency improvement Enabling higher frequency Increased power density Cooling effort reduction Reduction of system complexity and cost
Potential applications
Energy generation o Solar string inverter and solar optimizer
Industrial power supplies o Industrial UPS o Industrial SMPS
Infrastructure – Charge o Charger
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22
Drain pin 2
Source pin 3
Table 1
Key Performance and Package Parameters
Type
VDS
IMW120R060M1H 1200V
ID
TC = 25°C, Rth(j-c,max)
36A
RDS(on)
Tvj = 25°C, ID = 13A, VGS = 18V
60mΩ
Tvj,max 175°C
Marking 12M1H060
Package PG-TO247-3
Datasheet
Please read the Important Notice and Warnings at the end of this document
www.infineon.com
page 1 of 17
2.1 2019-12-10
IMW120R060M1H
CoolSiC™ 1200V SiC Trench MOSFET Table of contents
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Features .....................................................................................................................
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