IMW120R350M1H

IMW120R350M1H IMW120R350M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses Gate pin 1  Threshold-free on state characteristic  Wide gate-source voltage range  Benchmark gate threshold voltage, VGS(th) = 4.5V  0V turn-off gate voltage for easy and simple gate drive  Fully controllable dV/dt  Robust body diode for hard commutation  Temperature independent turn-off switching losses Benefits  Efficiency improvement  Enabling higher frequency  Increased power density  Cooling effort reduction  Reduction of system complexity and cost Potential applications  Energy generation o Solar string inverter and solar optimizer  Industrial power supplies o Industrial UPS o Industrial SMPS  Infrastructure – Charge o Charger Product validation Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22 Drain pin 2 Source pin 3 Table 1 Key Performance and Package Parameters Type VDS IMW120R350M1H 1200V ID TC = 25°C, Rth(j-c,max) 4.7A RDS(on) Tvj = 25°C, ID = 2A, VGS = 18V 350mΩ Tvj,max Marking 175°C 12M1H350 Package PG-TO247-3 Datasheet Please read the Important Notice and Warnings at the end of this document www.infineon.com page 1 of 17 2.1 2019-12-10 IMW120R350M1H CoolSiC™ 1200V SiC Trench MOSFET Table of contents T12a0b0lVe SoifCcTornentechnMtsOSFET Features ...................................................................................................................