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IDK08G120C5 Datasheet, Equivalent, Schottky Diode.1200V Schottky Diode 1200V Schottky Diode |
| Part | IDK08G120C5 |
|---|---|
| Description | 1200V Schottky Diode |
| Feature | IDK08G120C5 IGC13R65U8W2 IGC13R65U8W2 IG C13R65U8W2 IGC513thR6G5eUn8Wer2ation Co olSiCTM 1200V Schottky Diode IGC13R65U8 W2 SiC Diode Features Revolutionary semiconductor material - Silicon Carbid e No reverse recovery current / no fo rward recovery Temperature independen t switching behaviour Low forward vol tage even at high operating temperature Tight forward voltage distribution E xcellent thermal performance 1 2 Ext ended surge current capability Specifi ed dv/dt ruggedness Pb-free lead plati ng; RoHS compliant Potential applicatio ns Pin definition Pin 1 and backside: Cathode 1 Pin . |
| Manufacture | Infineon |
| Datasheet |
| Part | IDK08G120C5 |
|---|---|
| Description | 1200V Schottky Diode |
| Feature | IDK08G120C5 IGC13R65U8W2 IGC13R65U8W2 IG C13R65U8W2 IGC513thR6G5eUn8Wer2ation Co olSiCTM 1200V Schottky Diode IGC13R65U8 W2 SiC Diode Features Revolutionary semiconductor material - Silicon Carbid e No reverse recovery current / no fo rward recovery Temperature independen t switching behaviour Low forward vol tage even at high operating temperature Tight forward voltage distribution E xcellent thermal performance 1 2 Ext ended surge current capability Specifi ed dv/dt ruggedness Pb-free lead plati ng; RoHS compliant Potential applicatio ns Pin definition Pin 1 and backside: Cathode 1 Pin . |
| Manufacture | Infineon |
| Datasheet |
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