IDK08G120C5

IDK08G120C5 IGC13R65U8W2 IGC13R65U8W2 IGC13R65U8W2 IGC513thR6G5eUn8Wer2ation CoolSiCTM 1200V Schottky Diode IGC13R65U8W2 SiC Diode Features  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / no forward recovery  Temperature independent switching behaviour  Low forward voltage even at high operating temperature  Tight forward voltage distribution  Excellent thermal performance 1 2  Extended surge current capability  Specified dv/dt ruggedness  Pb-free lead plating; RoHS compliant Potential applications Pin definition Pin 1 and backside: Cathode 1 Pin 2: Anode 2  Drives  Industrial power supplies: Industrial UPS  Solar central inverters and Solar string inverter Product validation  Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22 Description  System efficiency improvement over Si diodes  Enabling higher frequency / increased power density solutions  System size/cost savings due to reduced heatsink requirements and smaller magnetics  Reduced EMI  Highest efficiency across the entire load range  Robust diode operation during surge events  High reliability  Related Links: www.infineon.com/SiC CASE Key performance parameters Type IDK08G120C5 VDC IF 1200 V 8 A QC 28nC Tvj,max 175°C Marking D8512C5 Package PG-TO263-2 Datasheet Please read the Important Notice and Warnings at the end of this document www.infineon.com page 1 of 12 V 2.0 2019-10-28 5th Generation Co...