AIDW40S65C5

AIDW40S65C5 CoolSiC™ Automotive Schottky Diode 650V G5 650V/40A Silicon Carbide Schottky Diode in TO247-3 Features  Revolutionary semiconductor material - Silicon Carbide  Benchmark switching behavior  No reverse recovery/ No forward recovery  Temperature independent switching behavior  High surge current capability  Pb-free lead plating; RoHS compliant  Junction Temperature range from -40°C to 175°C  System efficiency improvement over Si diodes  System cost / size savings due to reduced cooling requirements  Enabling higher frequency / increased power density solutions  Higher system reliability due to lower operating temperatures  Reduced EMI Potential Applications  Traction inverter  Booster / DCDC Converter  On board Charger / PFC Product Validation “Qualified for Automotive Applications. Product Validation according to AEC-Q100/101” Description The 5th Generation CoolSiC™ Automotive Schottky Diode represents Infineon leading edge technology for Silicon Carbide Schottky Barrier diodes. Thanks to a compact design and a technology based on thin wafers, this family of products shows improved efficiency over all load conditions resulting from both its thermal characteristics and low figure of merit (Qc x Vf). This product family has been designed to complement Infineon’s IGBT and CoolMOS™ portfolio. This ensures meeting the most stringent application requirements in the 650V voltage class. Product Information Ordering Code AIDW40S65C5 Marking AD4065C5 ...