RB168MM-40TF
Schottky Barrier Diode
(AEC-Q101 qualified) Data sheet
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RB168MM-40TF
Schottky Barrier Diode
(AEC-Q101 qualified) Data sheet
●Outline
VR
40
V
Io
1
A
IFSM
40
A
●Features High reliability Small power mold type Super low IR
●Inner Circuit
●Application
●Packaging Specifications
General rectification
Packing
Embossed Tape
Reel Size(mm)
180
●Structure
Taping Width(mm)
8
Quantity(pcs)
3000
Silicon epitaxial planar
Taping Code
TR
Marking
31
●Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage Reverse voltage
VRM
Duty≦0.5
VR
Reverse direct voltage
40
V
40
V
Average rectified forward current
Io
Glass epoxy mounted、 60Hz half sin waveform、resistive load
1
A
Peak forward surge current
Junction temperature Storage temperature
IFSM
60Hz half sin waveform、Non-repetitive、 one cycle、Ta=25℃
40
A
Tj
-
Tstg
-
150
℃
-55 ～ 150
℃
●Characteristics (Tj=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Forward voltage
VF
IF=1A
Reverse current
IR
VR=40V
Min. Typ. Max. Unit - 0.60 0.65 V - 0.05 0.55 μA
Attention
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1/5
2019/05/28_Rev.002
RB168MM-40TF
●Characteristic Curves
Data sheet
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